TITLE

Metalorganic chemical vapor deposition InGaAs p-i-n photodiodes with extremely low dark current

AUTHOR(S)
Gallant, M.; Puetz, N.; Zemel, A.; Shepherd, F. R.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p733
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Planar, Zn-diffused InP/InGaAs p-i-n photodiodes, which have been fabricated from material grown by metalorganic chemical vapor deposition, have been shown to exhibit extremely low dark current. The typical dark current measured for 100-μm-diam devices was 10 pA at -10 V bias, with some devices having values as low as 3 pA (3.8×10-8 A/cm2). Excellent uniformity of the dark current was found. A low capacitance of 0.45 pF, a responsivity at 1.3 μm of 0.90 A/W, and rise/fall times of less than 150 ps were measured at -5 V bias.
ACCESSION #
9826102

 

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