Transport measurements of Sb contacts to InP(110)

Zahn, D. R. T.; McLean, A. B.; Williams, R. H.; Esser, N.; Richter, W.
February 1988
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p739
Academic Journal
The electrical properties of antimony contacts to vacuum cleaved n- and p-type InP(110) surfaces were studied using current-voltage and capacitance-voltage techniques. While the Sb/n-InP(110) interface forms an ‘‘ohmic’’ contact, an extremely large Schottky barrier was found at Sb/p-InP(110) contacts.


Related Articles

  • Simple, extremely low resistance contact system to n-InP that does not exhibit.... Weizer, Victor G.; Fatemi, Navid S. // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2731 

    Presents an extremely low resistance contact system to n-indium phosphide. Absence of metal-semiconductor intermixing during sintering; Effect of germanium on metallurgical interaction; Result of retarded entry of indium into the contacting gold.

  • The achievement of near-theoretical-minimum contact resistance to InP. Fatemi, Navid S.; Weizer, Victor G. // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p6740 

    Describes the achievement of near-theoretical-minimum contact resistance to indium phosphide (InP). Description of the structures used in the investigation; Overview of the InP/nickel/gold contact system; Electrical behavior of the contact systems.

  • Radiation effects and interphase interactions in ohmic and barrier contacts to indium phosphide as induced by rapid thermal annealing and irradiation with γ-ray Co photons. Belyaev, A.; Boltovets, N.; Bobyl, A.; Ivanov, V.; Kapitanchuk, L.; Kladko, V.; Konakova, R.; Kudryk, Ya.; Korchevoi, A.; Lytvyn, O.; Milenin, V.; Novitskii, S.; Sheremet, V. // Semiconductors;Dec2010, Vol. 44 Issue 12, p1559 

    The radiation resistance of Au-Pd-Ti-Pd- n-InP ohmic contacts and Au-TiB- n- n- n-InP barrier contacts-both initial and subjected to a rapid thermal annealing and irradiated with Co γ-ray photons with doses as high as 10 R-has been studied. Before and after external effects, the electrical...

  • Analysis of temperature-dependent Schottky barrier parameters of Cu-Au Schottky contacts to n-InP. Devi, V. Lakshmi; Jyothi, I.; Reddy, V. Rajagopal // Canadian Journal of Physics;Jan2012, Vol. 90 Issue 1, p73 

    In this work, we have investigated the electrical characteristics of Au-Cu-n-InP Schottky contacts by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements in the temperature range 260-420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias...

  • Temperature-dependent Schottky barrier characteristics of Cu/Au Schottky contacts to n-InP. Devi, V. Lakshmi; Jyothi, I.; Reddy, V. Rajagopal // AIP Conference Proceedings;12/12/2011, Vol. 1393 Issue 1, p369 

    The electrical characteristics of Au/Cu/n-InP Schottky diodes have been investigated by current-voltage (I-V) measurements in the temperature range 260-420 K in steps of 20 K. The forward I-V characteristics are analysed on the basis of standard thermionic emission (TE) theory and the assumption...

  • Some Considerable Effects on Pt/n-InP Schottky Diode Current-Voltage Characteristics due to Electron Irradiation. Korkut, H.; Ejderha, K.; Akbay, A.; Öztürka, Y.; Korkut, T.; Türüt, A. // AIP Conference Proceedings;12/27/2011, Vol. 1400 Issue 1, p497 

    Schottky contacts have impact role in a large perspective of electronic devices from sensing to switching and detecting. Radiation applications of Schottky contacts are popular fields at the present day. We fabricated a Pt/n-InP Schottky diode by using magnetron sputtering technique....

  • Indium Phosphide ICs Complement CMOS. Raghavan, Gopal // Siliconindia;Jun2003, Vol. 7 Issue 5, p38 

    Discusses the use of indium phosphide in high-speed optoelectronic applications. Characteristics of indium phosphide; Difference from other semiconductors; Other applications of indium phosphide.

  • Metal reactivity effects on the surface recombination velocity at InP interfaces. Rosenwaks, Y.; Shapira, Yoram; Huppert, D. // Applied Physics Letters;12/10/1990, Vol. 57 Issue 24, p2552 

    Direct measurements of the surface recombination velocity (SRV) on etched InP(110) and at its interfaces with various metals deposited by thermal evaporation have been performed using ultrafast time-resolved photoluminescence. The results show that the original InP low SRV is retained when these...

  • Enhanced quantum efficiency internal photoemission detectors by grating coupling to surface plasma waves. Brueck, S. R. J.; Diadiuk, V.; Jones, T.; Lenth, W. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p915 

    Enhanced quantum efficiencies have been obtained for Au-InP internal photoemission detectors using grating coupling of incident radiation into surface plasma waves confined to the air-metal interface. Enhancements of over a factor of 30 are observed at the resonance coupling angles. A model...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics