Semi-insulating current blocking property simulations for buried heterostructure laser diodes

Asada, S.; Sugou, S.; Kasahara, K.; Kato, Y.; Kumashiro, S.
February 1988
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p703
Academic Journal
A compound-semiconductor device simulator, in which deep levels in the semi-insulating layers can be taken into account, has been developed. By using this simulator, the electrical properties for the semi-insulating InP buried heterostructure laser diodes were investigated. The leakage current, without passing through the active region, was found to be small when the trap density in the semi-insulating InP layers is more than 3×1015 cm-3 and less than 1×1016 cm-3. This simulator will be a useful tool in predicting the semi-insulating properties of electrical and optical semiconductor devices.


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