TITLE

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

AUTHOR(S)
Radhakrishnan, G.; McCullough, O.; Cser, J.; Katz, J.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p731
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 °C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.
ACCESSION #
9826068

 

Related Articles

  • Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy. Yano, R.; Hirayama, Y.; Miyashita, S.; Uesugi, N.; Uehara, S. // Journal of Applied Physics;9/15/2003, Vol. 94 Issue 6, p3966 

    Reports on reflection-type degenerate pump-probe spectroscopy for low-temperature grown gallium arsenide to study the effects of arsenic pressure during crystal growth and annealing on carrier lifetime. Finding that a sample grown under a high arsenic pressure has a shorter carrier lifetime for...

  • Quantitative modeling of the annealing-induced changes of the magnetotransport in Ga1-xMnxAs alloys. Michel, C.; Baranovskii, S. D.; Thomas, P.; Heimbrodt, W.; Elm, M. T.; Klar, P. J.; Goldlücke, B.; Wurstbauer, U.; Reinwald, M.; Wegscheider, W. // Journal of Applied Physics;Oct2007, Vol. 102 Issue 7, p073712 

    We study the changes of magnetoresistance induced by controlled thermal annealing at temperatures ranging from 300 to 600 °C of a Ga0.98Mn0.02As alloy grown by low-temperature molecular beam epitaxy. We use a resistor-network model for describing the electrical transport as a function of...

  • Effects of annealing on the surface morphology of decapped GaAs(001). Yang, Y.-N.; Luo, Y.S. // Applied Physics Letters;10/19/1992, Vol. 61 Issue 16, p1930 

    Examines the effects of annealing on the surface morphology of decapped gallium arsenide (GaAs) grown by molecular beam epitaxy. Details on the annealing temperature; Disappearance of small GaAs islands during the annealing process; Creation of a dipole associated with the surface reconstruction.

  • Annealing of low-temperature GaAs studied using a variable energy positron beam. Keeble, D.J.; Umlor, M.T. // Applied Physics Letters;7/5/1993, Vol. 63 Issue 1, p87 

    Examines the annealing of low-temperature (LT) gallium arsenide (GaAs) using molecular beam epitaxy (MBE). Approximate pressure of LT-GaAs sample in Varian Gen II MBE system; Comparison between LT-GaAs layer and GaAs substrate on S parameter; Observation of defects in the LT-GaAS layer.

  • On the sublattice location of GaAs grown on Ge. Li, Yuan; Lazzarini, L.; Giling, L. J.; Salviati, G. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5748 

    Deals with a study which demonstrated the growth of single domain gallium arsenide layers by atmosphere pressure metal-organic vapor phase epitaxy on germanium substrates. Background on the substrate; Experimental details; Results and discussions.

  • Chemical beam epitaxial growth of strained carbon-doped GaAs. Chiu, T. H.; Cunningham, J. E.; Ditzenberger, J. A.; Jan, W. Y. // Applied Physics Letters;7/9/1990, Vol. 57 Issue 2, p171 

    We report an investigation of the growth characteristics of GaAs by chemical beam epitaxy using trimethyl-Ga and arsine. The growth rate behaviors as a function of temperature, As overpressure, and alkyl arrival rate are qualitatively similar to those using triethyl-Ga with differences that can...

  • Gas-source molecular beam epitaxy growth of Ga[sub x]In[sub 1-x]As[sub y]P[sub 1-y] lattice.... Zhang, G. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1128 

    Examines the gas-source molecular beam epitaxy growth of Ga[sub x]In[sub 1-x]As[sub y]P[sub 1-y] layers lattice matched to gallium arsenide. Use of x-ray diffraction, photoluminescence and Hall measurements; Preparation of high-quality heterojunctions and quantum well structures; Presence of...

  • Growth and properties of thin GaAs epitaxial layers on Al2O3. Kuech, T. F.; Segmüller, A.; Kuan, T. S.; Goorsky, M. S. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6497 

    Presents a study which investigated the growth and properties of thin gallium arsenide (GaAs) epitaxial layers on Al[sub2]O[sub3]. Overview of previous studies on the heteroepitaxial growth of GaAs on highly lattice mismatched substrates; Details of experimental procedures; Discussion on the...

  • Long wavelength InAs1-xSbx/GaAs detectors prepared by molecular beam epitaxy. Bethea, C. G.; Yen, M. Y.; Levine, B. F.; Choi, K. K.; Cho, A. Y. // Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1431 

    We prepared InAs0.02Sb0.98 on semi-insulating GaAs substrates with molecular beam epitaxy and measured the temperature dependence of the band gap. Photoconducting detectors were measured and found to have high internal quantum efficiency (47%) and high speed (10 ns).

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics