Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

Radhakrishnan, G.; McCullough, O.; Cser, J.; Katz, J.
February 1988
Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p731
Academic Journal
Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 °C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.


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