TITLE

Low-temperature reactive ion etching and microwave plasma etching of silicon

AUTHOR(S)
Tachi, Shinichi; Tsujimoto, Kazunori; Okudaira, Sadayuki
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p616
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new low-temperature reactive ion etching and microwave plasma etching method is described. Highly anisotropic silicon etching with extremely small width shifts has been performed with high selectivities of 30 for organic resist films. High etch rates of 500 and 1000 nm/min by reactive ion etching and microwave plasma etching, respectively, were achieved with a SF6 gas plasma at low wafer temperatures from -130 to -100 °C. It is concluded that lower temperatures during plasma treatment yield lower side etching and increase the dry etch resistance of organic masks.
ACCESSION #
9826057

 

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