TITLE

Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111)

AUTHOR(S)
Shigeta, Y.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p619
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Some surface structure change of an amorphous Si film deposited on Si (111) during the solid phase epitaxy was observed by low-energy electron diffraction (LEED). The LEED intensity profile shows the formation of 7×7 structure whenever a crystallized surface is constructed. The intensity increases with an increase of the annealing temperature Ta, where the increasing rate with Ta becomes small for 590
ACCESSION #
9826055

 

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