Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111)

Shigeta, Y.
February 1988
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p619
Academic Journal
Some surface structure change of an amorphous Si film deposited on Si (111) during the solid phase epitaxy was observed by low-energy electron diffraction (LEED). The LEED intensity profile shows the formation of 7×7 structure whenever a crystallized surface is constructed. The intensity increases with an increase of the annealing temperature Ta, where the increasing rate with Ta becomes small for 590


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