TITLE

Laser-induced degradation of GaAs photoluminescence

AUTHOR(S)
Raja, M. Y. A.; Brueck, S. R. J.; Osinski, M.; McInerney, J.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p625
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report experimental studies of laser-induced degradation of surface photoluminescence efficiency in n-GaAs, p-GaAs, semi-insulating Cr-doped, and undoped liquid-encapsulated Czochralski-grown GaAs for excitation intensities ranging from ∼0.1 to ∼20 kW/cm2. The data suggest a contribution from optically induced defects in the bulk material. The time dependence of photoluminescence efficiency was fitted to a simple power-law expression. A previously unreported fast decay of photoluminescence, occurring in 1–2 s immediately following the cleaving of a fresh surface, was observed in p- and n-type samples.
ACCESSION #
9826053

 

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