15% efficiency (1 sun, air mass 1.5), large-area, 1.93 eV AlxGa1-xAs (x=0.37) n-p solar cell grown by metalorganic vapor phase epitaxy

Chung, B-C.; Hamaker, H. C.; Virshup, G. F.; Werthen, J. G.
February 1988
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p631
Academic Journal
1.93 eV AlxGa1-xAs (x=0.37) n-p solar cells with areas of 4 cm2 have been fabricated by metalorganic vapor phase epitaxy. Under 1 sun, air mass 1.5, simulated conditions, the cell exhibiting a conversion efficiency as high as 15% is characterized by a short-circuit current density of 12.0 mA/cm2, an open-circuit voltage of 1.42 V, and a fill factor of 0.87. The realization of these high-quality AlGaAs solar cells at a band gap of 1.93 eV implies the potential for other promising optoelectronic devices in the visible spectrum.


Related Articles

  • A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell. Olson, J. M.; Kurtz, S. R.; Kibbler, A. E.; Faine, P. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p623 

    A two-terminal, monolithic cascade solar cell with an efficiency of 27.3% is reported. The device structure consists of a Ga0.5In0.5P homojunction grown epitaxially upon a GaAs homojunction, with a GaAs tunnel diode interconnect. The tandem combination of these two materials is lattice matched,...

  • Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition. Ray, S.; Ruden, P.; Sokolov, V.; Kolbas, R.; Boonstra, T.; Williams, J. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1666 

    Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively....

  • Bistable switching in nonlinear Al0.06Ga0.94As étalons. Sahlén, Olof; Masseboeuf, Eric; Rask, Michael; Nordell, Nils; Landgren, Gunnar // Applied Physics Letters;11/7/1988, Vol. 53 Issue 19, p1785 

    Optical bistability at 5 mW input power at 840 nm is reported in Al0.06Ga0.94As étalons grown by metalorganic vapor phase epitaxy, having an epitaxially grown high-reflecting back mirror. The devices have been switched from the high-reflecting to the low-reflecting state with pulses from a...

  • High-power, narrow single-lobe operation from 20-element phase-locked arrays of antiguides. Mawst, L. J.; Botez, D.; Jansen, M.; Roth, T. J.; Peterson, G. // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2060 

    Pure in-phase-mode operation is obtained from 20/21-element AlGaAs/GaAs antiguided arrays grown by two-step metalorganic chemical vapor deposition. Oscillation of out-of-phase modes is substantially suppressed by a built-in spatial filter: two sets of noncollinear antiguides separated by a...

  • Diffusion-enhanced epitaxial growth of thickness-modulated low-loss rib waveguides on patterned GaAs substrates. Colas, E.; Shahar, A.; Tomlinson, W. J. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p955 

    Rib waveguides have been fabricated without any post-crystal growth processing steps. The ribs are defined by the two nongrowth (111)B surfaces that develop at each edge of (011) mesas on a patterned GaAs substrate during organometallic chemical vapor deposition (OMCVD) of GaAs/AlGaAs...

  • In situ determination of free-carrier concentrations by reflectance difference spectroscopy. Tanaka, H.; Colas, E.; Kamiya, I.; Aspnes, D.E.; Bhat, R. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3443 

    Examines the determination of free carriers in gallium arsenide layers under organometallic chemical vapor deposition growth condition. Transition between n- and p-type doping during layer epitaxy; Measurement of the sensitivity of the layers; Determination of the substrate temperature.

  • Structural and optical properties of GaAlInAs lattice matched to InP grown by low-pressure metalorganic vapor phase epitaxy. Davies, J. I.; Marshall, A. C.; Scott, M. D.; Griffiths, R. J. M. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p276 

    We report for the first time, the metalorganic vapor phase epitaxy (MOVPE) growth of the quaternary alloy GaxAlyIn1-x-yAs, lattice matched to InP. Single epitaxial layers were prepared showing specular morphologies and lattice matching within Δa/a=10-3. Epilayers showed a high degree of...

  • Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition. Reed, A. D.; Bose, S. S.; Stillman, G. E. // Applied Physics Letters;3/27/1989, Vol. 54 Issue 13, p1262 

    Two mechanisms controlling residual carbon acceptor incorporation in GaAs grown by atmospheric pressure metalorganic chemical vapor deposition have been identified: (1) the removal of the first methyl group from trimethylgallium in the gas phase, and (2) the removal of the first hydrogen atom...

  • Evidence of a gas phase transport mechanism for Si incorporation in the metalorganic chemical vapor deposition of GaAs. George, T.; Weber, E. R.; Nozaki, S.; Murray, J. J.; Wu, A. T.; Umeno, M. // Applied Physics Letters;11/13/1989, Vol. 55 Issue 20, p2090 

    Enhanced incorporation of Si is observed in the metalorganic chemical vapor deposition of homoepitaxial GaAs layers, grown in the presence of Si substrates placed adjacent to the GaAs substrates in the reactor. The electron concentrations of the GaAs layers are a function of the proximity to the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics