TITLE

15% efficiency (1 sun, air mass 1.5), large-area, 1.93 eV AlxGa1-xAs (x=0.37) n-p solar cell grown by metalorganic vapor phase epitaxy

AUTHOR(S)
Chung, B-C.; Hamaker, H. C.; Virshup, G. F.; Werthen, J. G.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p631
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
1.93 eV AlxGa1-xAs (x=0.37) n-p solar cells with areas of 4 cm2 have been fabricated by metalorganic vapor phase epitaxy. Under 1 sun, air mass 1.5, simulated conditions, the cell exhibiting a conversion efficiency as high as 15% is characterized by a short-circuit current density of 12.0 mA/cm2, an open-circuit voltage of 1.42 V, and a fill factor of 0.87. The realization of these high-quality AlGaAs solar cells at a band gap of 1.93 eV implies the potential for other promising optoelectronic devices in the visible spectrum.
ACCESSION #
9826049

 

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