Deep level transient spectroscopy on single, isolated interface traps in field-effect transistors

Karwath, A.; Schulz, M.
February 1988
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p634
Academic Journal
Electron emission from single, isolated traps is observed in stepped current transients of micrometer-size metal oxide semiconductor field-effect transistors. Deep level transient spectroscopy evaluation is performed by counting traps to estimate the average state density Dit ≊6 ×1010 eV-1 cm-2 close to the conduction-band edge (Ec-Eit =20–250 meV). The capture coefficient (prefactor for activated emission) is determined to Bn =10-21 cm3 s-1 for these slow traps.


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