Dose dependence of crystallization in implanted polycrystalline silicon films on SiO2

Iverson, R. B.; Reif, R.
February 1988
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p645
Academic Journal
Crystallization of 1500 Å polycrystalline silicon films self-implanted at doses of 2×1015–6×1015 ions/cm2 is investigated. For doses of 2×1015–5×1015 ions/cm2, crystallization is due to the growth of crystallites which nucleate at a rate which decreases with increasing dose. Above 5×1015 ions/cm2, the nucleation rate is comparable to that of amorphous silicon, though a transient time is observed during which little or no nucleation occurs. The growth velocity does not appear to be dose dependent.


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