Electron mobility in p-type GaAs

Nathan, M. I.; Dumke, W. P.; Wrenner, K.; Tiwari, S.; Wright, S. L.; Jenkins, K. A.
February 1988
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p654
Academic Journal
The mobility of electrons in p-type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm-3. At 77 K, μPn =6000 cm2/(V s). The room-temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n-type material.


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