TITLE

Electron mobility in p-type GaAs

AUTHOR(S)
Nathan, M. I.; Dumke, W. P.; Wrenner, K.; Tiwari, S.; Wright, S. L.; Jenkins, K. A.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p654
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The mobility of electrons in p-type GaAs, μPn has been determined by measuring the common emitter cutoff frequency fT of heterojunction bipolar transistors with a wide, uniformly doped base. At 295 K, μPn =1150 cm2/(V s) is found for a hole concentration of 3.6×1018 cm-3. At 77 K, μPn =6000 cm2/(V s). The room-temperature value is considerably smaller and the 77 K value considerably larger than the electron mobility in comparably doped n-type material.
ACCESSION #
9826034

 

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