TITLE

Electron beam source molecular beam epitaxial growth of analog graded AlxGa1-xAs ballistic transistors

AUTHOR(S)
Malik, Roger J.; Levi, Anthony F. J.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p651
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new method has been developed for the growth of graded band-gap AlxGa1-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded AlxGa1-xAs unipolar ballistic electron transistors.
ACCESSION #
9826007

 

Related Articles

  • Strong Enhancement of Rashba Effect in Strained p-type Quantum Wells. Gvozdić, D. M.; Ekenberg, U. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1423 

    One of the most studied spintronic devices is the spin transistor proposed by Datta and Das. The mechanism behind this transistor is the Rashba effect: The inversion asymmetry caused by the gate voltage gives rise to a spin splitting. We show that the relevant spin splitting in k-space is...

  • Suppression of emitter size effect on the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors. Mohammad, S. Noor; Chen, J.; Chyi, J.-I.; Morkoç, H. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p937 

    The effect of emitter periphery-to-area ratio on the current-voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress...

  • AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region. SCIANA, BEATA; RADZIEWICZ, DAMIAN; PUCICKI, DAMIAN; TLACZALA, MAREK; KOV�C, JAROSLAV; SRNANEK, RUDOLF // Optica Applicata;2005, Vol. 35 Issue 3, p645 

    The paper presents the technology and characterisation of n-p-n AlGaAs/GaAs heterojunction phototransistor (HPT) with a thin (50 nm) Zn delta-doped GaAs base region. Such a construction of the HPT transistor was applied to obtain higher current gain and lower power consumption. The electrical...

  • dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor. Henderson, T.; Klem, J.; Peng, C. K.; Gedymin, J. S.; Kopp, W.; Morkoç, H. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1080 

    Extremely large current double interface GaAs/In0.15 Ga0.85 As/Al0.15 Ga0.85 As pseudomorphic modulation-doped field-effect transistors (MODFET’s) grown by molecular beam epitaxy were achieved. The 1-μm gate devices studied have peak current levels (430 mA/mm at 300 K and 483 mA/mm at...

  • Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots. Göpfert, S.; Worschech, L.; Lingemann, S.; Schneider, C.; Press, D.; Höfling, S.; Forchel, A. // Applied Physics Letters;11/29/2010, Vol. 97 Issue 22, p222112 

    The authors report on the fabrication and characterization of single-electron memories based on site-controlled InAs quantum dots (QDs) embedded in a GaAs/AlGaAs quantum-wire transistor. By using a hole structure template on a modulation-doped GaAs/AlGaAs heterostructure in combination with...

  • Tunable Resonant Detection of sub-THz Radiation with GaAs/AlGaAs High Electron Mobility Transistors at Magnetic Fields. Białek, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Wróbel, J.; Czapkiewicz, M.; Fronc, K.; Umansky, V. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p927 

    We report on investigation of oscillations periodic in the magnetic field observed in magnetoresistence, photocur-rent and photovoltage measurements in GaAs/AlGaAs high electron mobility field-effect transistor subjected to sub-terahertz radiation. The spectra show edge magnetoplasmons and...

  • Fabrication of Undoped AlGaAs/GaAs Electron Quantum Dots. See, Andrew M.; Klochan, Oleh; Micolich, Adam P.; Hamilton, Alex R.; Aagesen, Martin; Lindelof, Poul E. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p343 

    We have fabricated quantum dot single electron transistors based on an AlGaAs/GaAs heterostructure without any modulation doping. Our devices are very stable from an electronic perspective, with clear Coulomb blockade oscillations. Bias spectroscopy measurements of the smaller dot device show...

  • Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation. Sandroff, C. J.; Nottenburg, R. N.; Bischoff, J.-C.; Bhat, R. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p33 

    With a simple chemical treatment we have passivated nonradiative recombination centers at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor, resulting in a 60-fold increase in the current gain of the device at low collector currents. This large enhancement in gain was achieved by...

  • Photocurrent resonances in short-period AlAs/GaAs superlattices in an electric field. Al’perovich, V. L.; Terekhov, A. S.; Tkachenko, V. A.; Tkachenko, O. A.; Moshegov, N. T.; Toropov, A. I.; Yaroshevich, A. S. // Physics of the Solid State;Jan99, Vol. 41 Issue 1, p143 

    The photocurrent was measured as a function of the external electric field in short-period AlAs/ GaAs superlattices for various photon energies. Transport resonances, whose positions do not depend on the photon energy, were observed in these dependences together with optical resonances due to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics