Interface degradation in Si-metal-oxide-semiconductor structures by homogeneous, microwave heating of channel carriers

Qiu-Yi, Ye; Zrenner, A.; Koch, F.; Zeller, C.; Dorda, G.
February 1988
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p561
Academic Journal
Using a pulsed microwave source to provide a strong lateral electric field in a Si-metal-oxide-semiconductor structure, we observe interface degradation by hot holes. Damage occurs in a two-step process. Holes are trapped in the oxide at low temperature and are subsequently converted into interface states in an annealing step at room temperature.


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