Radiation and hot-electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane

Wang, Yu; Nishioka, Yasushiro; Ma, T. P.; Barker, R. C.
February 1988
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p573
Academic Journal
The hardness of SiO2/Si structures grown in O2+TCA (1,1,1,-trichloroethane) to damages caused by ionizing radiation and hot-electron injection has been found to depend strongly on the amount of TCA introduced. Using minute amounts (much smaller than conventionally used) of TCA, we have been able to achieve a dramatic improvement of the hardness. When excess amounts of TCA are used, however, the hardness degrades. In addition, the use of TCA also causes a significant change in the gate size dependence of the radiation or hot-electron-induced interface traps. These results will be explained in terms of the effects of Cl on the interfacial strain near the SiO2/Si transition region.


Related Articles

  • Equivalence between interface traps in SiO2/Si generated by radiation damage and hot-electron injection. Nishioka, Yasushiro; da Silva, Eronides F.; Ma, T. P. // Applied Physics Letters;2/29/1988, Vol. 52 Issue 9, p720 

    We have made a comparison between the interface traps generated in the metal/SiO2/Si structure by x-ray ionizing radiation and Fowler–Nordheim hot-electron injection, and found very strong similarities between the two. More specifically, the qualitative features of the energy distribution...

  • Evidence for energy coupling from the Si–D vibration mode to the Si–Si and Si–O vibration modes at the SiO[sub 2]/Si interface. Zhi Chen; Jun Guo; Ong, Pangleen // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2151 

    In order to verify Van de Walle and Jackson’s theory on the isotope effect of the Si–H/D bonds resistant to hot-electron excitation [C. G. Van de Walle and W. B. Jackson, Appl. Phys. Lett., 69, 2441 (1996)], we measured the Si–H, Si–D, and other vibrational modes in...

  • Generation of interface states at the silicon/oxide interface due to hot-electron injection. Wong, H.; Cheng, Y. C. // Journal of Applied Physics;12/15/1993, Vol. 74 Issue 12, p7364 

    Presents information on a study wherein theoretical expressions for the hot-electron induced interface state generation and threshold-voltage shift are developed, by considering the decomposition of water-related bonds at the silicon-oxide interfaces. Methods; Results; Discussion.

  • Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface. Cartier, E.; Stathis, J. H. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p103 

    It is demonstrated that pre-existing silicon dangling bonds in Al-gate metal-oxide-semiconductor capacitors on (111) silicon substrates are passivated during hot-electron stress, while defects—of an as yet unidentified nature—are simultaneously generated. This degradation behavior...

  • Effects of thermal nitridation on the radiation hardness of the SiO2/Si interface. de Castro, A. J.; Fernández, M.; Sacedón, J. L. // Journal of Applied Physics;6/1/1993, Vol. 73 Issue 11, p7465 

    Presents a study which examined the influence of thermal nitridation on the radiation hardness of the SiO[sub2]/silicon interface. Details on the experiment; Information on the Auger chemical characterization; Discussion of findings.

  • Identification of an interface defect generated by hot electrons in SiO[sub 2]. Stathis, J.H.; DiMaria, D.J. // Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2887 

    Examines the identification of an interface defect component generated by hot electrons in SiO[sub 2]. Implication of hot electron in the gate dielectric of field effect transistors; Use of electrically detected magnetic resonance; Establishment of electron heating correlation with hot-electron...

  • Study of the interface-state formation at different temperatures. El-Hdiy, Abdelillah // Applied Physics Letters;12/13/1993, Vol. 63 Issue 24, p3338 

    Presents the study on the interface-state formation in a polycrystalline silicon (Si) gate-oxide-semiconductor capacitor at different temperatures. Range of temperature used in the study; Calculation for concentration profile of boron atoms; Effects of hot electrons on the Si-Si or Si-oxygen...

  • Recombination characteristics of minority carriers near the Al[sub x]O[sub y]/GaAs interface.... Gebretsadik, H.; Zhang, K. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3865 

    Characterizes the recombination velocities of minority carriers for the aluminum oxide/gallium arsenide (AlO/GaAs) interface using light beam induced current technique. Length of diffusion of carriers near the interfaces; Properties of oxidized AlO/GaAs; Addition of Ga in the AlAs interfaces.

  • Photoemission studies of the hydrogenated silicon-gold interface. Lu, Z. H.; Sham, T. K.; Norton, P. R. // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p37 

    The formation of the gold-silicon interface on c-Si(100) and hydrogen-passivated c-Si(100) has been studied by synchrotron radiation photoemission spectroscopy. The results show that the presence of Si-H on the surface (a) quenches the surface dangling bond states and (b) reduces the Au-Si...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics