Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K

Huang, Yihe; Yu, Peter Y.; Lee, Henry; Wang, Shyh
February 1988
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p579
Academic Journal
Photoluminescence of GaAs films grown on Si substrate has been investigated quantitatively at 77 K. The peak shift and splitting of the exciton luminescence are shown to result from tensile stress in the film. Information on carrier lifetime has been deduced from the line shape of the photoluminescence.


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