Carbon-doped AlxGa1-xAs-GaAs quantum well lasers

Guido, L. J.; Jackson, G. S.; Hall, D. C.; Plano, W. E.; Holonyak, N.
February 1988
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p522
Academic Journal
Data are presented demonstrating that carbon (C) can be used as the active p-type dopant in high-quality AlxGa1-xAs-GaAs quantum well laser crystals. We show, by fabricating three different types of stripe geometry laser diodes (oxide stripe, hydrogenated stripe, and impurity-induced layer-disordered stripe), that C is a stable dopant and compatible in behavior with typical integrated-circuit style of device processing. The data suggest that more complicated laser geometries are possible on C-doped material because of minimal pattern ‘‘undercutting’’ after processing by, for example, hydrogenation or impurity-induced layer disordering.


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