Schottky and field-effect transistor fabrication on InP and GaInAs

Loualiche, S.; L’Haridon, H.; Le Corre, A.; Lecrosnier, D.; Salvi, M.; Favennec, P. N.
February 1988
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p540
Academic Journal
Schottky contacts with barrier heights of 0.76 eV on n-type InP and 0.65 eV on n-type GaInAs are realized by a new surface treatment. These contacts are used as a gate for the fabrication of field-effect transistors (FET) on these materials. Extrinsic transconductances of 100 and 7.5 mS/mm are measured on GaInAs and InP FET’s, respectively. These values are obtained without optimization of the ohmic contacts of the devices and without a gate recess.


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