TITLE

Dislocation-free GaAs epitaxial growth with the use of modulation-doped AlAs-GaAs superlattice buffer layers

AUTHOR(S)
Shinohara, Masanori
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p543
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Suppression of dislocation threading from the substrate into GaAs epitaxial layers is investigated by using AlAs-GaAs superlattice buffer layers grown by molecular beam epitaxial technique. The efficiency of suppression is compared among several types of AlAs-GaAs superlattices with different electrically active impurity-doping distributions. With the use of modulation-doped AlAs(Si)-GaAs superlattice, dislocation threading is almost perfectly suppressed, and consequently, a dislocation-free epilayer can be grown. Dislocation bending at the AlAs/GaAs interface is thought to be due to the interaction between dislocations and electric charges.
ACCESSION #
9825957

 

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