TITLE

Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy

AUTHOR(S)
Bellon, P.; Chevalier, J. P.; Martin, G. P.; Dupont-Nivet, E.; Thiebaut, C.; André, J. P.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p567
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaInP films grown by metalorganic vapor phase epitaxy on GaAs substrates are observed by transmission electron microscopy in cross sections. A 1/2 (111) (CuPt type) ordering is observed, for the first time in this system, with only two orientation variants occurring. A layered structure (layer thickness 2 nm) develops parallel to the substrate and extra diffuse scattering is also observed at 2/9 (220). The observation of the 1/2 (111) ordering is not predicted by the current first-principle phase diagram calculations. Substrate effects on the orientation and number of ordering variants are identified.
ACCESSION #
9825947

 

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