Chemical ordering in GaxIn1-xP semiconductor alloy grown by metalorganic vapor phase epitaxy

Bellon, P.; Chevalier, J. P.; Martin, G. P.; Dupont-Nivet, E.; Thiebaut, C.; André, J. P.
February 1988
Applied Physics Letters;2/15/1988, Vol. 52 Issue 7, p567
Academic Journal
GaInP films grown by metalorganic vapor phase epitaxy on GaAs substrates are observed by transmission electron microscopy in cross sections. A 1/2 (111) (CuPt type) ordering is observed, for the first time in this system, with only two orientation variants occurring. A layered structure (layer thickness 2 nm) develops parallel to the substrate and extra diffuse scattering is also observed at 2/9 (220). The observation of the 1/2 (111) ordering is not predicted by the current first-principle phase diagram calculations. Substrate effects on the orientation and number of ordering variants are identified.


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