TITLE

Effects of fluorine ion implantation on metal-oxide-semiconductor devices of silicon-on-sapphire

AUTHOR(S)
Zaima, Shigeaki; Yasuda, Yukio; Ito, Masahiro; Nakamura, Tetsuro
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p459
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of fluorine ion implantation on electrical characteristics of metal-oxide-semiconductor (MOS) devices on silicon-on-sapphire have been investigated. The fluorine implantation generates deep acceptor levels, the nature of which is significantly affected by the sequence of the implantation and gate oxidation in device fabrication process steps. It was found that drain leakage current of fluorine-implanted MOS transistors can be reduced to about 0.1 times compared with unimplanted devices without degrading the basic electrical characteristics.
ACCESSION #
9825917

 

Related Articles

  • A theoretical model for the density distribution of mobile ions in the oxide of metal-oxide-semiconductor structures. Mitra, V.; Bentarzi, H.; Bouderbala, R.; Benfdila, A. // Journal of Applied Physics;5/1/1993, Vol. 73 Issue 9, p4287 

    Discusses a study which developed a model for the density distribution of the mobile ions in the oxide of a metal-oxide-semiconductor structure. Theoretical background; Computational approach considered; Results.

  • Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation. Kaschieva, S.; Rebohle, L.; Skorupa, W. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 5, p823 

    The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O[SUP+] or B[SUP+]) implanted samples are gamma-irradiated with [SUP60]Co. Gamma irradiation creates electron levels at...

  • Kinetics of ion depolarization of Si–MOS structures in the linear voltage sweep regime. Zhdan, A. G.; Goldman, E. I.; Chucheva, G. V. // Semiconductors;Dec97, Vol. 31 Issue 12, p1268 

    A new approach is developed to describe isothermal ion depolarization of Si-MOS structures in the regime of linear variation of the gate electrode potential V[sub g]. The approach is based on the experimentally proven fact of the substantially nonequilibrium nature of ion transport in such...

  • Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation. Kar, S.; Srikanth, K. // Applied Physics Letters;6/15/1992, Vol. 60 Issue 24, p3001 

    Investigates the efficacy of room-temperature hydrogenation in removing ion-beam-induced defects in metal-oxide-silicon (MOS) structures. Generation of defects by exposure of thermally oxidized silicon samples; Sensitivity of MOS structures to ion-beam damage; Use of Raman spectroscopy to...

  • Effect of germanium implantation on metal-oxide-semiconductor avalanche injection. Ta-Cheng Lin; Young, Donald R. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3499 

    Investigates the effect of germanium implantation on metal-oxide-semiconductor avalanche injection. Implantation of various doses of germanium into the Si-SiO[sub 2] interface; Use of the avalanche injection technique to generate hot electrons in the substrate; Description of avalanche...

  • Ion beam mixing for enhanced electron tunneling in metal-oxide-silicon structures. Walker, A.J.; Politiek, J. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p758 

    Examines the ion beam mixing for enhanced electron tunneling in metal-oxide-silicon structures. Implantation of germanium ions into the polycrystalline silicon layer; Reduction of Fowler-Nordheim (FN) tunneling barrier at the gate/oxide interface; Application of FN tunneling to nonvolatile...

  • Necessity of hydrogen for activation of implanted fluorine in Si/SiO[sub 2] structures. Afanas'ev, V.V.; de Nijs, J.M.M.; Balk, P. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2949 

    Examines the elimination of trapping centers in aluminum/silica/silicon (Si) metal oxide semiconductor capacitors using fluorine ion implantation in oxides with various hydrogen contents. Significance of hydrogen in the reduction of electron and hole trap densities; Suppression of the...

  • Requirements and Challenges in Ion Implanters for Sub-100nm CMOS Device Fabrication. Ukyo Jeong, Ian M.; Zhiyong Zhao; Baonian Guo, Ian M.; Gongchuan Li, Ian M.; Sandeep Mehta, Ian M. // AIP Conference Proceedings;2003, Vol. 680 Issue 1, p697 

    As CMOS technology moves into sub-100nm regime, significance of non-planar structure effects have grown. Traditional ion implant performed at off-critical angle exhibits shortfalls in device integration and performance merits. Modern ion implanters have evolved to face challenges of on-axis...

  • Stability of trapped electrons in SiO[sub 2]. Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L. // Applied Physics Letters;5/17/1999, Vol. 74 Issue 20, p2969 

    Examines the thermal stability of trapped electron associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors using thermally stimulated current and capacitance voltage methods. Density of deeply trapped electrons in radiation-hardened oxides; Annealing of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics