Investigations of the quantum photovoltaic effect in InAs-GaSb semiconductor superlattices

Bleuse, J.; Voisin, P.; Voos, M.; Munekata, H.; Chang, L. L.; Esaki, L.
February 1988
Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p462
Academic Journal
We report the observation in InAs-GaSb semiconductor superlattices of a photovoltaic effect that has a quantum origin, as it arises from the spatial separation of the electron and hole ground-state wave functions in these type II superlattices. The results are consistent with the simplest theoretical predictions, except for the voltage sign, which evidences a depopulation of the surface layer.


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