TITLE

Photoluminescence studies of silicon-on-insulator substrates formed by oxygen implantation

AUTHOR(S)
Davey, S. T.; Davis, J. R.; Reeson, K. J.; Hemment, P. L. F.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p465
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence spectroscopy has been used to study silicon-on-insulator substrates formed by oxygen implantation. Samples having post-implantation anneals at 1200 and 1300 °C were investigated. The dislocation-related D-line emission is observed in all the samples, but with lower intensity in the samples annealed at the higher temperature, indicative of their superior crystal quality. Group V contaminants in some samples were identified from their excitonic emission. Additional low-temperature anneals at 450 and 750 °C significantly increased the intensity of the excitonic emission from the samples, and in addition, emission from thermal donors was also observed.
ACCESSION #
9825912

 

Related Articles

  • Luminescence due to electron-hole condensation in silicon-on-insulator. Tajima, Michio; Ibuka, Shigeo // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p2224 

    Focuses on the origin of the photoluminescence from a thin silicon-on-insulator (SOI) layer, exhibiting the thickness of approximately 0.1...m by ultraviolet (UV) light from the recombinant of electrons and holes in their condensed phase. Increase of the UV excitation; Reference to a systematic...

  • Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates. Cao, J.; Pavlidis, D. // Applied Physics Letters;12/29/1997, Vol. 71 Issue 26, p3880 

    Examines the photoluminescence of gallium nitride (GaN) grown on silicon-on-insulator substrates. Influence of temperature and strain on ultraviolet (UV) emission; Comparison between the strain-induced blue shift of UV peak and unstrained GaN; Role of electron mobility on blue shift reduction.

  • Photoluminescence study of an ultrathin strained silicon on insulator layer. Munguía, J.; Bremond, G.; de la Torre, J.; Bluet, J.-M. // Applied Physics Letters;1/22/2007, Vol. 90 Issue 4, p042110 

    Low temperature photoluminescence has been performed in order to analyze the strain effect on the Si band structure for an 8 nm thick tensile strained silicon layer on insulator. The authors show three phonon assisted optical transitions related to the strained silicon top layer at 0.923, 0.983,...

  • Enhanced photoluminescence from germanium-based ring resonators. Peng Huei Lim; Kobayashi, Yosuke; Takita, Shinya; Ishikawa, Yasuhiko; Wada, Kazumi // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p041103 

    We report the enhancement of direct bandgap emission from germanium ring resonators based on silicon-on-insulator (SOI). As a consequence of their strong confinement, a record quality factor (Q) of 620 is obtained that is an order of magnitude higher than that previously characterized for...

  • Characterization of bond and etch-back silicon-on-insulator wafers by photoluminescence under.... Tajima, M.; Ibuka, S. // Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p231 

    Characterizes bond and etch-back silicon-on-insulator (SOI) wafers using photoluminescence (PL) spectroscopy under ultraviolet light excitation. Emission of PL light only on SOI layer; Disappearance of defect related emission and electron hole droplet signal appearance after annealing.

  • Characteristics of erbium implants in silicon-on-insulator. Tang, Y. S.; Sealy, B. J. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2530 

    Presents a study that analyzed the characteristics of erbium implants in silicon-on-insulator semiconductors. Methodology; Analysis of the photoluminescence of the semiconductors; Examination of the annealing temperature dependence of the luminescence energies.

  • Photoluminescence and microstructural properties of high-temperature annealed buried oxide silicon-on-insulator. Duncan, W. M.; Chang, P.-H.; Mao, B.-Y.; Chen, C.-E. // Applied Physics Letters;9/7/1987, Vol. 51 Issue 10, p773 

    The defect properties of buried oxide silicon-on-insulator (SOI) formed by high dose O+ ion implantation and annealed in the temperature range of 1150–1300 °C were examined using photoluminescence (PL) spectroscopy and transmission electron microscopy. The intensity of radiative defect...

  • SiGe/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates. Denisov, S.; Matveev, S.; Chalkov, V.; Shengurov, V.; Drozdov, Yu.; Stepikhova, M.; Shengurov, D.; Krasilnik, Z. // Semiconductors;Mar2014, Vol. 48 Issue 3, p402 

    The growth of heterostructures with SiGe layers on $$\left( {1\bar 102} \right)$$ sapphire substrates by molecular-beam epitaxy with a silicon sublimation source and a germanium gas source (GeH) is reported. The systematic study of the influence of substrate temperature and thickness of the...

  • Structural and Photoluminescence Properties of Heteroepitaxial Silicon-on-Sapphire Layers. Svetlov, S.P.; Chalkov, V. Yu.; Shengurov, V.G.; Drzodov, Yu. N.; Krasil'nik, Z.F.; Krasil'nikova, L.V.; Stepikhova, M.V.; Pavlov, D.A.; Pavlova, T.V.; Shilyaev, P.A.; Khokhlov, A.F. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p10 

    The growth of erbium-doped silicon layers on sapphire substrates through sublimation molecular-beam epitaxy is studied for the first time. Structural analysis data are given, and the luminescence properties of layers are discussed. Heteroepitaxial silicon-on-sapphire layers grown at a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics