Erratum: On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]

Houle, F. A.
February 1988
Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p515
Academic Journal
Presents a corrected version of the article, titled 'On the relative importance of physical and chemical sputtering during ion-enhanced etching of silicon by XeF[2],' by F.A. Houle, published in the volume 50 issue of the 'Applied Physics Letters' journal.


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