Impurity-stimulated crystallization and diffusion in amorphous silicon

Nygren, E.; Pogany, A. P.; Short, K. T.; Williams, J. S.; Elliman, R. G.; Poate, J. M.
February 1988
Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p439
Academic Journal
An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon.


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