Materials choice for ballistic transport: Group velocities and mean free paths calculated from realistic band structures

Krishnamurthy, Srinivasan; Sher, A.; Chen, A.-B.
February 1988
Applied Physics Letters;2/8/1988, Vol. 52 Issue 6, p468
Academic Journal
We studied the effects of realistic band structures on the group velocities and mean free paths due to scattering by longitudinal optical phonons, ionized impurities, alloy disorder, and other electrons on limiting ballistic transport in GaAs, InAs, InP, GaInAs, GaAlAs, and InAsP alloys. The upper cutoff frequency and fraction of ballistic electrons transporting through devices made from these materials are calculated. For thick devices (≥500 Å), GaInAs alloys have distinct advantages. However, for thin devices (≊100 Å), the cutoff frequencies range around 15 THz, and none of the materials have an appreciably higher ballistic fraction than GaAs.


Related Articles

  • Alloy scattering limited transport of two-dimensional carriers in strained Si[sub 1-x]Ge[sub x].... Venkataraman, V.; Liu, C.W. // Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2795 

    Examines the alloy scattering limited transport of two-dimensional electrons in strained Si[sub 1-x]Ge[sub x] quantum wells. Dependence of mobility on carrier concentration; Growth of the modulation-doped structures by rapid thermal chemical vapor deposition; Indication of electron gas presence...

  • HIGH-FIELD MAGNETOTRANSPORT STUDIES OF FERROMAGNETIC GaAs/Mn DIGITAL ALLOYS. Kim, G. B.; Na, M.; Acbas, G.; McCombe, B. D.; Wang, S.; Cheon, M.; Luo, H.; Liu, X.; Sasaki, Y.; Furdyna, J. K. // International Journal of Modern Physics B: Condensed Matter Phys;11/30/2004, Vol. 18 Issue 27-29, p3735 

    Magnetotransport properties of ferromagnetic GaAs/Mn digital alloys have been investigated in fields up to 33 T. A series of four GaAs/Mn digital alloys with different Mn coverages (0.15 ML - 0.5 ML) at fixed GaAs spacer thickness (9 ML), with Curie temperatures, TC, between 20 and 40 K shows...

  • Monte Carlo Simulation of Electron Transport in AlGaAS. El-Ela, F. M. Abou // AIP Conference Proceedings;2005, Vol. 748 Issue 1, p86 

    This paper studies the high electric field transport in the ternary alloy AlxGa1-xAs for composition x range from 0.0 to 0.35. Our calculations are based on a Monte Carlo technique for the three-valley conduction band model. Scattering sources include polar optical phonons, intervalley phonons,...

  • Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon. Min, B. C.; Lodder, J. C.; Jansen, R.; Motohashi, K. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08S701 

    The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7 eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration...

  • Electron dynamics in InN[sub x]Sb[sub 1-x]. Mahboob, I.; Veal, T.D.; McConville, C.F. // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2169 

    Electron transport properties in InN[sub x]Sb[sub 1-x] are investigated for a range of alloy compositions. The band structure of InN[sub x]Sb[sub 1-x] is modeled using a modified k·p Hamiltonian. This enables the semiconductor statistics for a given x value to be calculated from the...

  • Ab initio calculations of spin-dependent transport properties (invited) (abstract). Mertig, I. // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p5276 

    Presents an abstract of the study 'Ab initio Calculations of Spin-Dependent Transport Properties,' by I. Mertig.

  • Transport anisotropy in spontaneously ordered GaInP[sub 2] alloys. Chernyak, Leonid; Osinsky, Andrei // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2425 

    Examines the large anisotropy in minority carrier diffusion length and specific conductivity observed in epitaxial layers of GaInP[sub 2] alloys. Enhancement of diffusion length and specific conductivity; Attribution of reduction in transport length to carrier scattering; Lack of transport...

  • ALLOY SCATTERING AND SCALING IN THE INTEGER QUANTUM HALL PLATEAU-TO-PLATEAU TRANSITIONS. Wanli Li; Csathy, G. A.; Tsui, D. C.; Pfeiffer, L. N.; West, K. W. // International Journal of Modern Physics B: Condensed Matter Phys;11/30/2004, Vol. 18 Issue 27-29, p3569 

    The Quantum Hall Plateau-to-Plateau transition is a tong-standing problem that has not yet been solved. Around the critical point, very different critical exponents of the localization length have been gotten experimentally. We approach this problem by doing experiments in the alloy disorder,...

  • Chaotic properties of quantum transport in Ni-Nb-Zr-H glassy alloys. Fukuhara, Mikio; Ban, Masanobu // Chaos;Sep2010, Vol. 20 Issue 3, p033107 

    We analyzed the dynamic evolution of an ensemble of electrons performing macroscopic resonant tunneling for room-temperature millimeter-sized Coulomb oscillation in Ni-Nb-Zr-H glassy alloys as a function of the cluster size and boundary length using a one-dimensional Kronig-Penny model with a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics