TITLE

Determination of the critical layer thickness of Si1-xGex/Si heterostructures by direct observation of misfit dislocations

AUTHOR(S)
Kohama, Y.; Fukuda, Y.; Seki, M.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p380
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dependence of the critical layer thickness hc on mole fraction x of Si1-xGex/Si heterostructures is determined by direct observations of misfit dislocations by using the electron beam induced current (EBIC) technique and transmission electron microscopy (TEM). The EBIC images of the Si1-xGex/Si interfaces show square-grid patterns running in the <110> directions. These patterns are identified by TEM observation to be misfit dislocations generated at the Si1-xGex/Si interface. The dependence of hc on x is compared with the results reported by R. People and J. C. Bean [Appl. Phys. Lett. 47, 322 (1985) and 49, 229 (1986)]. The comparison reveals that inconsistency exists between them, especially in the range of x<0.3. This inconsistency is considered to arise from the difference in the techniques adopted to determine the hc’s.
ACCESSION #
9825838

 

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