Organometallic epitaxy of HgCdTe on CdTeSe substrates with high compositional uniformity

Ghandhi, Sorab K.; Bhat, Ishwara B.; Fardi, Hamid
February 1988
Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p392
Academic Journal
We report here on the growth of Hg0.8Cd0.2Te on lattice-matched substrates of CdTe0.96Se0.04 by organometallic vapor phase epitaxy. Results are compared with those for comparable layers grown on CdTe substrates. It is shown that the use of lattice-matched substrates results in active layers of improved structural quality, as evidenced by the results of double-crystal x-ray diffraction measurements. A compositional uniformity of better than ±0.005 (in the Cd composition) was obtained over 1 cm ×2 cm area substrates, corresponding to a standard deviation of 0.0024. The thickness uniformity was better than ±0.7 μm for 12-μm-thick layers. These layers were deposited by the direct alloy growth, without the interdiffusion of separate layers of HgTe and CdTe. Both n- and p-type layers have been grown by suitable modification to the growth process. Mobility values in excess of 6×105 cm2/V s were obtained in n-type material (x=0.2), with an electron concentration below 1×1015 cm-3. With p-type layers, mobility values of 400 cm2/V s were obtained with a hole concentration of 1×1017 cm-3.


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