Formation of thermally stable high-resistivity AlGaAs by oxygen implantation

Pearton, S. J.; Iannuzzi, M. P.; Reynolds, C. L.; Peticolas, L.
February 1988
Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p395
Academic Journal
Oxygen implantation into n+-AlGaAs, followed by annealing above 600 °C, creates a deep acceptor level that compensates the shallow donors present in the material. Temperature-dependent Hall measurements show that the resistivity of this compensated AlGaAs has a thermal activation energy of 0.49 eV, in contrast to a value of 0.79 eV for compensation caused by ion-induced damage. The latter is stable only to 600 °C, whereas the chemically induced compensation in O-implanted AlGaAs is stable above 950 °C.


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