TITLE

Determination of pairwise interaction potential parameters from a double scattering experiment

AUTHOR(S)
Hetterich, W.; Derks, H.; Heiland, W.
PUB. DATE
February 1988
SOURCE
Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p371
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The backscattering of K+ from an Ir(110) surface is used to determine the parameters of the screening function of the interaction potential. The energy range used (from 0.3 to 6 keV) corresponds to a potential range from 10 to 4000 eV. In the case studied the J. F. Ziegler, J. P. Biersack, U. Littmark [Stopping Powers and Ranges of Ions in Matter, edited by J. F. Ziegler (Pergamon, New York, 1985)] (ZBL) universal screening function gives a better fit to the experiment than the G. Molière [Z. Naturf. 2a, 133 (1947)] screening function.
ACCESSION #
9825800

 

Related Articles

  • Significantly extended analytical potential of Rutherford backscattering spectrometry by in situ combination with low-energy sputtering. Wittmaack, K.; Menzel, N. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1708 

    We have assembled a dual-beam system which allows solid samples to be analyzed by Rutherford backscattering spectrometry (RBS) at deliberately chosen stages of in situ sputter etching by low-energy ion bombardment. Using the novel setup we demonstrate that, for a large variety of samples, the...

  • Ion beam annealing during high current density implants of phosphorus into silicon. Cannavó, S.; La Ferla, A.; Rimini, E.; Ferla, G.; Gandolfi, L. // Journal of Applied Physics;6/15/1986, Vol. 59 Issue 12, p4038 

    Presents information on a study which measured the damage left by high current density implants of 120-kiloelectronvolt phosphorus[sup+] into silicon wafers of orientation using backscattering with channeling effect technique. Reason for the complex process of ion beam annealing; Influence of...

  • Angle-resolved energy distributions of He ions produced by backscattering of metastable He at low work function metal surface. Wada, M.; Sasao, M.; Nishiura, M.; Yamaoka, H.; Matsumoto, Y.; Shinto, K. // Review of Scientific Instruments;Feb2002, Vol. 73 Issue 2, p955 

    An apparatus capable of measuring the angle-resolved energy distribution function of ions produced by backscattering at metal surfaces is designed and tested. To exclude noise due to other impurity ions and electrons from the signal of target ions, a water-cooled magnetic deflection-type...

  • Mixing of Pt-René N4 alloy under Pt+ bombardment. Srinivasan, V.; Bhattacharya, R. S. // Journal of Applied Physics;4/1/1988, Vol. 63 Issue 7, p2257 

    Presents a study which measured the mixing rates of the Ni-Pt and René N4-Pt systems under high-energy ion bombardment using Rutherford backscattering spectroscopy. Amount of mixing predicated by the model; Extent of mixing in René N4-Pt; Review of related studies.

  • Formation of metallic nanophases in silica by ion-beam mixing Part I: Mixing mechanisms. Thomé, L.; Jagielski, J.; Rizza, G.; Garrido, F.; Pivin, J.C. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 3, p327 

    Abstract. The ion beam mixing of thin Ag layers embedded in a SiO[sub 2] matrix is studied by means of the Rutherford backscattering technique. Two different mechanisms are observed: at low temperature (300 K and below) the variance of the mixed profile varies with the square of the ion fluence,...

  • High energy ion beam analysis of buried α-Fe[sub 2]O[sub 3](0001)/α-Al[sub 2]O[sub 3](0001) interface. Thevuthasan, S.; Shutthanandan, V.; Adams, E. M.; Maheswaran, S. // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p432 

    We have investigated the disordering at the buried interface of α-Fe[sub 2]O[sub 3](0001)/α-Al[sub 2]O[sub 3](0001) interface using Rutherford backscattering spectrometry (RBS) and channeling techniques. Although expitaxially-grown α-Fe[sub 2]O[sub 3](0001)/α-Al[sub 2]O[sub 3](0001)...

  • Effects of energy straggling on surface analysis with fast ion beams. Kawano, Akira; Kido, Yoshiaki // Journal of Applied Physics;1/1/1988, Vol. 63 Issue 1, p75 

    Investigates the energy straggling effect on depth profiling by fast ion beams. Examples of backscattering analysis; Use of surface profilometer; Application of electrostatic troidal spectrometer as an energy analyzer for backscattered protons.

  • Growth and properties of ion beam synthesized Si/CoxNi1-xSi2/Si(111) structures. Wu, M. F.; Wachter, J. De; Van Bavel, A.-M.; Pattyn, H.; Langouche, G.; Vanhellemont, J.; Bender, H.; Temst, K.; Wuyts, B.; Bruynseraede, Y. // Journal of Applied Physics;1/15/1994, Vol. 75 Issue 2, p1201 

    Provides information on a study that reported on the quality, strain and orientation of ion beam synthesis-formed Co[subx]Ni[sub1-x]Si[sub2] ternary silicide layers studied by Rutherford backscattering spectroscopy channeling, Auger electron spectroscopy transmission electron microscopy and...

  • Linear dose dependence of ion beam mixing of metals on Si. Poker, D. B.; Appleton, B. R. // Journal of Applied Physics;2/15/1985, Vol. 57 Issue 4, p1414 

    Presents a study that determined linear dose dependence of ion beam mixing of metals on silicon. Use of helium backscattering spectroscopy to measure ion beam mixing of metals after silicon implantation; Discussion on reasons for a discrepancy regarding the depths of mixing.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics