Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition

Watkins, S. P.; Haacke, G.; Burkhard, H.
February 1988
Applied Physics Letters;2/1/1988, Vol. 52 Issue 5, p401
Academic Journal
A photoluminescence technique was used to identify residual donors in the 1014 cm-3 range in high-purity GaAs grown by metalorganic chemical vapor deposition. The measurements were taken at zero magnetic field. A narrow-linewidth tunable laser was used to resonantly enhance a specific narrow-linewidth ‘‘two-electron’’ satellite line of the donor-bound exciton, enabling determination of the 1s-to-2s donor energy separations. Ge was identified as the dominant residual donor. Lower levels of the donors X1 and X2 were observed in some samples. These are attributed to Si (or possibly Sn) and S donors.


Related Articles

  • Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using.... Maclnnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F. // Applied Physics Letters;2/15/1993, Vol. 62 Issue 7, p711 

    Observes the enhancement of photoluminescence (PL) intensity of GaAs semiconductor coated with chemical vapor-deposited GaS. Increase of PL intensity on surface recombination velocity; Use of Ga cluster as single-source precursor; Film characterization by transmission electron microscopy.

  • Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grown by low-pressure metalorganic chemical vapor deposition. Kim, Seong-II; Kim, Moo-Sung; Min, Suk-Ki; Lee, Choochon // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6128 

    Presents a study which analyzed carbon doped gallium arsenide (GaAs) epilayers grown by low-pressure metalorganic chemical vapor deposition by photoluminescence (PL) as functions of hole concentration and temperature. Effects of heavy doping on the optical and electrical properties of GaAs;...

  • Ultralong minority-carrier lifetime epitaxial GaAs by photon recycling. Ahrenkiel, R. K.; Dunlavy, D. J.; Keyes, Brian; Vernon, S. M.; Dixon, T. M.; Tobin, S. P.; Miller, K. L.; Hayes, R. E. // Applied Physics Letters;9/11/1989, Vol. 55 Issue 11, p1088 

    The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of...

  • Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition. Watkins, S. P.; Haacke, G.; Burkhard, H.; Thewalt, M. L. W.; Charbonneau, S. // Journal of Applied Physics;9/15/1988, Vol. 64 Issue 6, p3205 

    Examines magnetophotoluminescence characterization of residual donors in undoped gallium arsenide grown by metalorganic chemical vapor deposition. Details on the experiment; Results of the study; Discussion of findings.

  • Extremely sharp erbium-related intra-4f-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor deposition. Nakagome, Hiroshi; Uwai, Kunihiko; Takahei, Kenichiro // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1726 

    A drastic change is observed in the 1.5 μm Er-related photoluminescence spectra for GaAs:Er grown by metalorganic chemical vapor deposition, when the growth temperature and arsine partial pressure are reduced. An optically efficient Er-emitting center which shows a photoluminescence spectrum...

  • Photoluminescence properties of 13x13 nm GaAs quantum wires buried in trench structures reduced.... Sogawa, T.; Ando, S. // Applied Physics Letters;8/21/1995, Vol. 67 Issue 8, p1087 

    Examines the photoluminescence (PL) properties of gallium arsenide quantum wires through chemical vapor deposition. Determination of PL polarization anisotropy; Mechanism for eliminating undesired emission levels of the quantum wires; Factors affecting PL properties.

  • Photoluminescence in CdTe grown on GaAs by metalorganic chemical vapor deposition. Wang, C. H.; Cheng, K. Y.; Yang, S. J. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p962 

    Epitaxial layers of CdTe grown on (100) GaAs substrates by metalorganic chemical vapor deposition at temperatures between 320 and 410 °C were investigated by photoluminescent measurements at 14 K. The sharp bound exciton-related peak at 1.594 eV, the band-edge emission located near 1.557 eV,...

  • Resonant photoluminescence excitation in GaAs grown directly on Si. Zemon, S.; Jagannath, C.; Shastry, S. K.; Miniscalco, W. J.; Lambert, G. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p213 

    We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light-hole photoluminescence (PL) region, one identified with a free-exciton process and the other with...

  • A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition. Hsu, J. K.; Jones, S. H.; Lau, K. M. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3781 

    Focuses on an analytical method for quantitative interpretation of gallium arsenide photoluminescence. Use of carbon and zinc as acceptors; Measure of the material quality or impurity content; Different transitions associated with each acceptor species; Optimization of the organometallic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics