TITLE

Mode control in broad-area diode lasers by thermally induced lateral index tailoring

AUTHOR(S)
Hohimer, J. P.; Hadley, G. R.; Owyoung, A.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p260
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Broad-area diode lasers that emit in the fundamental mode under short-pulse excitation are observed to evolve into higher order lateral modes with increasing pulse width. Our data provide convincing evidence that the lateral refractive index profile arising from junction heating plays a dominant role in determining the lateral emission modes in these devices for long-pulse and cw operation. Furthermore, we show that an external focused laser heat source can be used to modify the lateral index profile in a broad-area laser and thus control the lasing mode. In particular, we demonstrate that ≲50 mW of absorbed heating power is sufficient to counteract the effects of internal junction heating and restore fundamental mode operation at cw injection currents as high as 1.5 Ithreshold. Our results suggest that fundamental mode operation of broad-area devices at high-power levels might be realized by incorporating a tailored lateral index profile to compensate for internal junction heating.
ACCESSION #
9825783

 

Related Articles

  • Self-organization of the Q-switched mode-locked regime in a diode-pumped Nd:YAG laser. Donin, V.; Yakovin, D.; Gribanov, A. // JETP Letters;Jun2015, Vol. 101 Issue 12, p783 

    A new Q-switched mode-locked generation regime of a solid-state laser, in which a Q-switch is 'spontaneously' formed at the frequency of relaxation oscillations, has been observed for the first time. The new generation has been implemented by means of the previously proposed method of an...

  • Converted-wave diodic moveout and application in the land gas cloud area. Zhang, Si-Hai; Li, Xiang-Yang; Dai, Heng-Chang // Applied Geophysics: Bulletin of Chinese Geophysical Society;Sep2011, Vol. 8 Issue 3, p171 

    PS converted-waves (C-waves) have been commonly used to image through gas clouds but the C-wave imaging may also be degraded by the diodic effect introduced by the gas cloud. It may be compensated for using a velocity perturbation method which decouples the diodic moveout into two parts: the...

  • Ultraviolet nanolasers. Lerner, Eric J. // Industrial Physicist;Oct/Nov2001, Vol. 7 Issue 5 

    Features the ultraviolet diode lasers. Feature of the nanolaser; Availability of the product; Emission of ultraviolet photons.

  • High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers. Kim, J.G.; Shterengas, L.; Martinelli, R.U.; Belenky, G.L. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p1926 

    We have fabricated and characterized 2.7 and 2.8 μm wavelength In(Al)GaAsSb/GaSb two-quantum-well diode lasers. All lasers have 2 mm cavity lengths and 100 μm apertures. Continuous wave operation up to 500 mW was recorded at 16 °C from 2.7 μm lasers, while 160 mW was obtained from...

  • Injection locking of coupled-stripe diode laser arrays. Goldberg, L.; Taylor, H. F.; Weller, J. F.; Scifres, D. R. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p236 

    The control of the far-field beam pattern and the spectrum of 10-element laser diode array by injection locking to a single-mode master laser are described. With less than 3 mW of injected power an array output of 105 mW at a single frequency with a 0.5° wide far-field lobe is obtained....

  • In-phase locking in diffraction-coupled phased-array diode lasers. Wang, Shyh; Wilcox, Jaroslava Z.; Jansen, Michael; Yang, Jane J. // Applied Physics Letters;6/30/1986, Vol. 48 Issue 26, p1770 

    Design criteria are presented for strong in-phase coupling of diffraction-coupled phased-array diode lasers. Theoretical predictions are confirmed by our experimental observations of double-lobe and single-lobe far-field patterns.

  • Nonlinear mixing and phase conjugation in broad-area diode lasers. Lucente, M.; Carter, G. M.; Fujimoto, J. G. // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p467 

    Four-wave mixing is investigated in broad-area diode lasers. Two external fields are injected into the device using a phase conjugation geometry and the nonlinear four-wave mixing signal observed by performing spectrally resolved measurement of the far field. By varying the injection geometry,...

  • Injection locking characteristics of a 1 W broad stripe laser diode. Goldberg, L.; Chun, M. K. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1900 

    Single narrow far-field lobe emission is observed in an injection-locked high-power broad stripe laser. Lobe widths below 1.3 times the diffraction limit for the 160-μm-wide stripe were observed for power levels up to 1.0 W. Decrease in the power contained within the narrow lobe for high...

  • Spatial and frequency dependence of four-wave mixing in broad-area diode lasers. Lucente, M.; Fujimoto, J. G.; Carter, G. M. // Applied Physics Letters;11/14/1988, Vol. 53 Issue 20, p1897 

    By injecting two external optical beams into a broad-area laser diode, four-wave mixing is generated via gain nonlinearities in the device. The nonlinear signals are observed by spectrally analyzing the transverse far-field profile of the emission from the device. By varying the injection angle...

  • Using diode lasers for atomic physics. Wieman, Carl E.; Hollberg, Leo // Review of Scientific Instruments;Jan1991, Vol. 62 Issue 1, p1 

    We present a review of the use of diode lasers in atomic physics with an extensive list of references. We discuss the relevant characteristics of diode lasers and explain how to purchase and use them. We also review the various techniques that have been used to control and narrow the spectral...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics