Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

Bell, L. D.; Kaiser, W. J.; Hecht, M. H.; Grunthaner, F. J.
January 1988
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p278
Academic Journal
Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.


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