Electrical properties of shallow p+-n junctions formed by BF2 ion implantation in germanium preamorphized silicon

Ozturk, M. C.; Wortman, J. J.
January 1988
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p281
Academic Journal
Shallow p+-n junctions were formed by BF2 ion implantation into both crystalline and Ge preamorphized substrates. Rapid thermal annealing (RTA) was used for dopant activation and damage removal. Secondary ion mass spectroscopy (SIMS) was used to measure the boron and fluorine distribution profiles. Based on SIMS analysis, junction depths as shallow as 0.12 μm can be formed using 25 keV/1×1015 cm-2 BF2 ion implantation into Ge preamorphized Si. The influence of Ge implantation parameters on the leakage current of junctions was investigated. The results show that if the Ge implantation conditions are optimized, high quality p+-n junctions can be formed in preamorphized substrates using RTA temperatures as low as 950 °C.


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