TITLE

Kinetics of structural relaxation and hydrogen evolution from plasma deposited silicon nitride

AUTHOR(S)
Budhani, R. C.; Bunshah, R. F.; Flinn, P. A.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p284
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Infrared absorption measurements and the temperature dependence of stress have been used to establish the kinetics of structural relaxation and hydrogen evolution from plasma deposited a-SixNy :H films. The Arrhenius rate law describes the dissociation of N–H and Si–H bonds which occurs on annealing the films above 600 °C. The activation energies deduced from the infrared data are lower than the respective bond dissociation energies. The films undergo a rapid stress relaxation in the temperature range 400–650 °C. The discussion of the experimental results highlights possible mechanisms for the evolution of hydrogen from a-SixNy[ATOTHER]@B:[/ATOTHER] H networks.
ACCESSION #
9825763

 

Related Articles

  • Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by... Mizokuro, Toshiko; Yoneda, Kenji // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2921 

    Presents information on a study which focused on a method for the formation of a silicon oxynitride layer at low temperature using a nitrogen plasma generated by low energy electron impact. Experimental details; Results and discussion; Conclusions.

  • Temperature and stress fields evolution during spark plasma sintering processes. Muñoz, S.; Anselmi-Tamburini, U. // Journal of Materials Science;Dec2010, Vol. 45 Issue 23, p6528 

    Numerical modelling of Spark Plasma Sintering (SPS) processes is essential to evaluate temperature and stress distributions that can result in sample inhomogeneities. Most of the available literature, however, produced analysis in static conditions. In this work, we focused our attention on the...

  • On the relaxation of cold electrons and hot ions. Potapenko, I.F.; Bobylev, A.V. // Physics of Plasmas;Jan1998, Vol. 5 Issue 1, p36 

    Focuses on the relaxation process of a space uniform plasma composed of cold electrons and hot ions. Description of the plasma relaxation; Stages of the relaxation of hot ions and cold electrons in the isotropic case; Details on the ion Maxwellization.

  • Relaxation of toroidal plasmas with finite pressure. Bhattacharjee, A.; Kwok, Y-C. // Physics of Fluids (00319171);Apr86, Vol. 29 Issue 4, p1156 

    Fast relaxation of toroidal plasmas with finite pressure is investigated, using an energy principle with global invariants. Relaxed states, which are not generally force-free and are stable according to Mercier’s criterion, are constructed by minimizing the potential energy of the plasma...

  • Transformation-Induced Relaxation and Stress Recovery of TiNi Shape Memory Alloy. Kohei Takeda; Ryosuke Matsui; Hisaaki Tobushi; Pieczyska, Elzbieta A. // Materials (1996-1944);Mar2014, Vol. 7 Issue 3, p1912 

    The transformation-induced stress relaxation and stress recovery of TiNi shape memory alloy (SMA) in stress-controlled subloop loading were investigated based on the local variation in temperature and transformation band on the surface of the tape in the tension test. The results obtained are...

  • Impact-induced glass transition in elastomeric coatings. Bogoslovov, R. B.; Roland, C. M.; Gamache, R. M. // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p221910 

    Polybutadiene (PB) has a low glass temperature Tg and exhibits rubbery behavior during mechanical perturbation. The corresponding PB-based polyurea (PU) has a higher Tg and fails in a brittle mode for high strain rates. However, unlike in glasses, this brittle failure is accompanied by large...

  • Nitrogen plasma instabilities and the growth of silicon nitride by electron cyclotron resonance... Pool, F.S. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2839 

    Studies the relation of nitrogen and silane nitrogen plasmas to the growth of silicon nitride as a function of pressure. Electron cyclotron resonance microwave plasma-enhanced chemical vapor deposition (ECR PECVD) system; Characterization of the silicon nitride; Plasma characterization; Plasma...

  • Control of the structure and stress state of thin films and coatings in the process of their preparation by ion-plasma methods. Sobol', O. // Physics of the Solid State;Jul2011, Vol. 53 Issue 7, p1464 

    system analysis of the influence of the substrate temperature during deposition on two main factors (nanodimensionality of structural aggregates and high stresses) responsible for the nonequilibrium state of the materials of ion-plasma-deposited films and coatings has been performed. It has been...

  • Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures. Bykhovski, A. D.; Gelmont, B. L.; Shur, M. S. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p3691 

    Presents a study that examined elastic strain relaxation in GaN-AIN-GaN seemiconductor-insulator-semiconductor structures. Method of the study; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics