Kinetics of structural relaxation and hydrogen evolution from plasma deposited silicon nitride

Budhani, R. C.; Bunshah, R. F.; Flinn, P. A.
January 1988
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p284
Academic Journal
Infrared absorption measurements and the temperature dependence of stress have been used to establish the kinetics of structural relaxation and hydrogen evolution from plasma deposited a-SixNy :H films. The Arrhenius rate law describes the dissociation of N–H and Si–H bonds which occurs on annealing the films above 600 °C. The activation energies deduced from the infrared data are lower than the respective bond dissociation energies. The films undergo a rapid stress relaxation in the temperature range 400–650 °C. The discussion of the experimental results highlights possible mechanisms for the evolution of hydrogen from a-SixNy[ATOTHER]@B:[/ATOTHER] H networks.


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