TITLE

Impact ionization in AlxGa1-xAs for x=0.1–0.4

AUTHOR(S)
Robbins, V. M.; Smith, S. C.; Stillman, G. E.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p296
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The impact ionization coefficients in AlxGa1-xAs have been experimentally determined for compositions x≤0.4. These data are necessary for accurate device design and modeling. Both α, the electron ionization coefficient, and β, the hole ionization coefficient, decrease with increasing x, and there is no appreciable change in the ratio α/β over the range of compositions and electric fields studied.
ACCESSION #
9825757

 

Related Articles

  • Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells. Zhang, S. K.; Wang, W. B.; Dabiran, A. M.; Osinsky, A.; Wowchak, A. M.; Hertog, B.; Plaut, C.; Chow, P. P.; Gundry, S.; Troudt, E. O.; Alfano, R. R. // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p262113 

    AlGaN p-i-n diodes were fabricated on 6H-SiC substrate using Al0.1Ga0.9N/Al0.15Ga0.85N multiquantum wells (MQWs) for the active region. Avalanche breakdown and breakdown luminescence of these AlGaN MQW diodes were experimentally investigated. Breakdown electroluminescence from the MQW active...

  • Avalanche multiplication in submicron Al...Ga...As/GaAs multilayer structures. Chia[a], C. K.; David[b], J. P. R.; Plimmer, S. A.; Rees, G. J.; Grey, R.; Robson, P. N. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2601 

    Presents the results of a systematic study of the role of band edge discontinuities on ionization rates in periodic Al[sub x]Ga[sub 1-x]As/GaAs structures by measuring the electron and hole multiplication characteristics of in a series of submicron multilayers. Dependence on initiating carrier...

  • Anomalous PL Brightening Inside A Current Density Filament In n-GaAs Under A Pulsed Electric Field. Aoki, Kazunori; Sakamoto, Naozumi; Tanigawa, Takayuki // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p127 

    Anomalous brightening of the photoluminescence (PL) during impact ionization avalanche has been found inside a current density filament in n-GaAs only when the short pulse voltage with the width less than 1μs was applied. The physical origin of the anomalous PL brightening has been discussed...

  • Solid-state current amplifier based on impact ionization. Hong-Wei Lee; Hawkins, Aaron R. // Applied Physics Letters;8/15/2005, Vol. 87 Issue 7, p073511 

    The operation principle, fabrication, and measurement results for a stand-alone amplifier based on impact ionization are reported. The device was built in silicon using standard microelectronic processes. Testing was performed by connecting the device to both silicon and indium-gallium-arsenide...

  • Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa). Zanoni, Enrico; Paccagnella, Alessandro; Pisoni, Pietro; Telaroli, Paolo; Tedesco, Carlo; Canali, Claudio; Testa, Nicoletta; Manfredi, Manfredo // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p529 

    Investigates the impact of ionization, recombination and visible light emission in aluminum gallium arsenide (GaAS)/GaAs high electron mobility transistors (HEMT). Electrical characteristics of a typical Toshiba S8901 HEMT; Energy distribution of the emitted photons; Information on the actual...

  • Townsend ionization coefficients of some argon-based mixtures in strong nonuniform electric fields. Krajcar Bronic, Ines; Grosswendt, Bernd // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6192 

    The reduced Townsend ionization coefficient α/P is derived from the measurement of the mean gas amplification factor in a low-pressure (P ≤ 50 kPa) proportional counter filled with argon-propane and argon-(dimethyl-ether) mixtures of various concentrations. The results are compared with...

  • Ionization coefficients in selected gas mixtures of interest to particle detectors. Datskos, P. G.; Carter, J. G.; Christophorou, L. G. // Journal of Applied Physics;1/1/1992, Vol. 71 Issue 1, p15 

    We have measured and report the total gas-number-density normalized effective ionization coefficient, &αsline;/N, as a function of the density-reduced electric field, E/N for Ar, CO[SUB2], CF[SUB4], the binary gas mixtures CF[SUB4]:Ar (20:80), CO[SUB2]Ar(20:80), C0[SUB2]:CH[SUB4](20:80) and...

  • Analysis of operation mechanism of semi-insulating GaAs photoconductive semiconductor switches. Tian, Liqiang; Shi, Wei // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p124512 

    This paper reports that the quenched-domain mode of luminous charge domain has been observed in semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSSs) and the typical characteristics of lock-on effect have been explained based on the model of luminous charge domain. It is shown...

  • Current filament dynamics in n-GaAs. Kostial, H.; Ploog, K.; Hey, R.; Boebel, F. G. // Journal of Applied Physics;10/1/1995, Vol. 78 Issue 7, p4560 

    Presents a study which investigated the controlled generation of current filaments in n-type gallium arsenide in the electric field region, where impurity impact-ionization avalanche breakdown takes place. Results of time-resolved current measurements on two filaments connected in parallel;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics