Current-voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy

Sugiyama, Yoshihiro; Inata, Tsuguo; Muto, Shunichi; Nakata, Yoshiaki; Hiyamizu, Satoshi
January 1988
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p314
Academic Journal
Well width dependence and temperature dependence of negative differential resistance characteristics of InGaAs/InAlAs resonant tunneling barrier diodes were investigated. Peak current density was almost independent of temperature, while the valley current density increased with increasing temperature above 100 K. At room temperature, a peak-to-valley current ratio of 5.5 with a peak current density of 4.8×104 A/cm2 was obtained by reducing the quantum well width to a narrow 32.2 Å. This is the largest peak-to-valley current ratio ever reported for resonant tunneling barrier diodes at room temperature.


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