Current-voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy

Sugiyama, Yoshihiro; Inata, Tsuguo; Muto, Shunichi; Nakata, Yoshiaki; Hiyamizu, Satoshi
January 1988
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p314
Academic Journal
Well width dependence and temperature dependence of negative differential resistance characteristics of InGaAs/InAlAs resonant tunneling barrier diodes were investigated. Peak current density was almost independent of temperature, while the valley current density increased with increasing temperature above 100 K. At room temperature, a peak-to-valley current ratio of 5.5 with a peak current density of 4.8×104 A/cm2 was obtained by reducing the quantum well width to a narrow 32.2 Å. This is the largest peak-to-valley current ratio ever reported for resonant tunneling barrier diodes at room temperature.


Related Articles

  • Mid-infrared electroluminescence from coupled quantum dots and wells. Shields, P. A.; Bumby, C. W.; Li, L. J.; Nicholas, R. J. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2725 

    Room temperature electroluminescence between 1.7–2.6 μm has been observed from coupled quantum dots and quantum wells in the InAs/InSb/GaSb materials system. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix. The...

  • Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm. Okamoto, Kuniyoshi; Kashiwagi, Junich; Tanaka, Taketoshi; Kubota, Masashi // Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG 

    We demonstrated nonpolar m-plane InGaN multiple quantum well laser diodes (LDs) under continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest reported for GaN-based LDs. A maximum optical output power of 15 mW was achieved, with the threshold current and the...

  • Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well. Liao, Chih-Teng; Tsai, Miao-Chan; Liou, Bo-Ting; Yen, Sheng-Horng; Kuo, Yen-Kuang // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p063107 

    Staggered quantum well structures are studied to eliminate the influence of polarization-induced electrostatic field upon the optical performance of blue InGaN light-emitting diodes (LEDs). Blue InGaN LEDs with various staggered quantum wells which vary in their indium compositions and quantum...

  • High-power operation in InGaAs separate confinement heterostructure quantum well laser diodes. Kitamura, M.; Takano, S.; Sasaki, T.; Yamada, H.; Mito, I. // Applied Physics Letters;7/4/1988, Vol. 53 Issue 1, p1 

    Lasing characteristics have been investigated systematically in long-wavelength InGaAs separate confinement heterostructure quantum well laser diodes (SCH QW LD’s) with varied well thicknesses and number of wells, for the first time. Marked improvements in threshold current density and...

  • Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers. Ridene, S.; Debbichi, M.; Ben fredj, A; Said, M.; Bouchriha, H. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 6, p063706 

    We present a theoretical study of band structure and optical gain spectra of dilute-N InAsN/GaSb/InAsN and the similar N-free InAs/GaSb/InAs laser structures, which have a “W” band alignment. Calculations are based on a 10×10 k·p model incorporating valence, conduction, and...

  • Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes. Park, Seoung-Hwan; Lee, Yong-Tak; Park, Jongwoon // Journal of Applied Physics;Aug2008, Vol. 104 Issue 3, p036106 

    Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well (QW) light-emitting diodes (LEDs) using a ZnO substrate are investigated using the multiband effective mass theory. These results are compared to those of conventional InGaN/GaN QW LEDs using a GaN...

  • Peculiarities of catastrophic optical damage in single quantum well InGaAsP/InGaP buried-heterostructure lasers. Yoo, Jae S.; Lee, Sang H.; Park, Gueorgui T.; Ko, Yong T.; Kim, Taeil // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1840 

    Presents a study which investigated the catastrophic optical damage in single quantum well indium gallium arsenic phosphide/indium gallium phosphide buried-heterostructure lasers. Sample preparation; Information on the causes of laser diode failures; Conclusions.

  • Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells. Liuolia, Vytautas; Marcinkevičius, Saulius; Lin, You-Da; Ohta, Hiroaki; DenBaars, Steven P.; Nakamura, Shuji // Journal of Applied Physics;Aug2010, Vol. 108 Issue 2, p023101 

    Spectrally-, polarization-, and time-resolved photoluminescence (PL) experiments have been performed on 2.5 nm thick m-plane single InGaN quantum wells. It has been found that PL decay is mainly determined by nonradiative recombination through several types of recombination centers, while PL...

  • Dispersion relation, electron and hole effective masses in InxGa1-xAs single quantum wells. Oettinger, K.; Wimbauer, Th.; Drechsler, M.; Meyer, B. K.; Hardtdegen, H.; Lüth, H. // Journal of Applied Physics;2/1/1996, Vol. 79 Issue 3, p1481 

    Deals with a study which determined the optical and electrical properties of modulation doped In[subx]Ga[sub1-x]/InP single quantum wells. Experimental details; Experimental results; Analysis and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics