Effect of group V/III flux ratio on the reliability of GaAs/Al0.3Ga0.7As laser diodes prepared by molecular beam epitaxy

Hayakawa, T.; Takahashi, K.; Suyama, T.; Kondo, M.; Yamamoto, S.; Hijikata, T.
January 1988
Applied Physics Letters;1/25/1988, Vol. 52 Issue 4, p252
Academic Journal
The effect of group V/III flux ratio γ on the reliability of GaAs/Al0.3Ga0.7As double-heterostructure lasers grown by molecular beam epitaxy at 720 °C has been studied. The threshold current does not change with γ. By contrast, the degradation rate strongly depends on γ and it takes a minimum at γ∼3 where the photoluminescence intensity of the Al0.3Ga0.7As cladding layer is maximum. In the case of γ∼3, the degradation rate is lower than that of lasers grown by liquid phase epitaxy.


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