Specific lattice location of Zn in CdTe determined by ion-channeling methods

Haga, T.; Suzuki, H.; Rashid, M. H.; Abe, Y.; Tanaka, A.
January 1988
Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p200
Academic Journal
The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms.


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