Langmuir–Blodgett film passivation of unpinned n-type gallium arsenide surfaces

Tabib-Azar, M.; Dewa, A. S.; Ko, W. H.
January 1988
Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p206
Academic Journal
This letter reports the results of the passivation of photochemically unpinned GaAs surfaces using Langmuir–Blodgett (LB) films. Metal-insulator-semiconductor structures are fabricated with LB films as the insulator. The high-frequency capacitance versus voltage measurements show an order of magnitude decrease in the interface trap density (1011 cm-2 eV-1) as compared to the GaAs/anodic oxide interface. The hysteresis in the capacitance versus voltage curves was reduced from a 3-V shift in the flatband voltage, to about a 1-V shift, a level which has been seen in Si/LB film metal-insulator-semiconductor structures. Passivation with LB films is of interest because of their interesting electrical, chemical, and optical properties that can be used in GaAs-based devices.


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