TITLE

High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates

AUTHOR(S)
Razeghi, M.; Omnes, F.; Defour, M.; Maurel, Ph.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p209
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-quality bulk InP and double heterostructure InP/GaInAsP/InP have been grown on silicon substrates by a low-pressure metalorganic chemical vapor deposition growth technique. X-ray diffraction patterns, as well as structural characterizations, indicate that the layers have very good crystalline quality. An intense photoluminescence signal from the quaternary alloy GaxIn1-xAsyP1-y has been recorded at room temperature, at the expected value of 1.3 μm.
ACCESSION #
9825682

 

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