Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S·9H2O regrowth

Nottenburg, R. N.; Sandroff, C. J.; Humphrey, D. A.; Hollenbeck, T. H.; Bhat, R.
January 1988
Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p218
Academic Journal
The deposition of sodium sulfide nonahydrate (Na2S·9H2O) onto mesa AlGaAs/GaAs heterostructure bipolar transistors confers near-ideal transport characteristics to the device structure. By reducing the GaAs surface recombination velocity, sulfide regrowth leads to current gain ( β) almost independent of collector current, and β>1 at collector current density below 5×10-7 A/cm-2. Furthermore, we obtain by passivation an emitter junction ideality factor of n=1.03.


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