TITLE

Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence

AUTHOR(S)
Papadopoulo, A. C.; Alexandre, F.; Bresse, J. F.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p224
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Oval defects in silicon-doped Ga0.7Al0.3As molecular beam epitaxy grown layers are studied by filtered cathodoluminescence at low temperatures (10 K) in a scanning electron microscope. The spectra obtained inside and outside the defects exhibit very different main emission lines which can be explained by an important variation of the Al/Ga ratio at the center of the defects; this hypothesis is confirmed by localized Auger electron spectroscopy.
ACCESSION #
9825671

 

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