TITLE

Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devices

AUTHOR(S)
Eaves, L.; Toombs, G. A.; Sheard, F. W.; Payling, C. A.; Leadbeater, M. L.; Alves, E. S.; Foster, T. J.; Simmonds, P. E.; Henini, M.; Hughes, O. H.; Portal, J. C.; Hill, G.; Pate, M. A.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p212
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetoquantum oscillations in the tunnel current of double-barrier n-GaAs/(AlGa)As/GaAs/(AlGa)As/GaAs resonant tunneling devices reveal evidence of sequential tunneling in the voltage range corresponding to the resonance when electrons tunnel into the second subband of the GaAs quantum well. The sequential tunneling arises from intersubband scattering between two quasi-bound states of the well. Near this resonance, the charge buildup in the well can be estimated from the magnetoquantum oscillations.
ACCESSION #
9825646

 

Related Articles

  • Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes. Brown, E. R.; Sollner, T. C. L. G.; Parker, C. D.; Goodhue, W. D.; Chen, C. L. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1777 

    We report room-temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1-nm-thick AlAs barriers. These results are consistent with a recently proposed equivalent circuit model for these diodes in which an inductance accounts for the temporal...

  • Effects of coupling and nonresonant tunneling on Coulomb blockade oscillations in an asymmetric.... Wang, T.H.; Tarucha, S. // Applied Physics Letters;10/27/1997, Vol. 71 Issue 17, p2499 

    Examines the effect of coupling and nonresonant tunneling on Coulomb blockade oscillations in an asymmetric double dot structure made of gallium arsenide (GaAs)/aluminium GaAs heterostructures. Single electron transport through the structure; Oscillation behaviors during the reduction of...

  • Effects of prewells on transport in p-type resonant tunneling diodes. Lewis, R. M.; Lewis, R.M.; Wei, H. P.; Wei, H.P.; Lin, S. Y.; Lin, S.Y.; Klem, J. F.; Klem, J.F. // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    We investigate the transport of holes through AlAs/In[sub 0.10]Ga[sub 0.90]As resonant tunneling diodes which utilize In[sub x]Ga[sub 1-x]As prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent increase in the...

  • Spin polarized tunneling through single-crystal GaAs(001) barriers. Kreuzer, S.; Moser, J.; Wegscheider, W.; Weiss, D.; Bichler, M.; Schuh, D. // Applied Physics Letters;6/17/2002, Vol. 80 Issue 24, p4582 

    We investigate spin-dependent transport through an epitaxial GaAs(001) barrier sandwiched between polycrystalline iron films. Electron transport through the barrier is dominated by quantum mechanical tunneling, demonstrated by a nonlinear I-V characteristic, an exponential dependence of the...

  • Influence of the barrier thickness on the noise performance of AlAs/GaAs/AlAs double barrier resonant tunneling diodes. Ouacha, A.; Willander, M.; Brugger, H.; Meiners, U. // Journal of Applied Physics;6/1/1995, Vol. 77 Issue 11, p6026 

    Presents information on a study which investigated the influence of the barrier thickness on the noise performance of AlAs/gallium arsenide/AlAs double barrier resonant tunneling diodes (DBRTD). Growth of DBRTD samples by molecular beam epitaxy; Characteristics of the diode samples; Measurement...

  • Combining resonant tunneling diodes for signal processing and multilevel logic. Lakhani, Amir A.; Potter, Robert C. // Applied Physics Letters;5/16/1988, Vol. 52 Issue 20, p1684 

    A device with multiple negative differential resistances was obtained by combining two AlInAs/InGaAs based resonant tunneling diodes in series. Equal peak currents and large current peak-to-valley ratios were demonstrated at room temperature. Three stable operating points were identified for...

  • Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures. Beresford, R.; Luo, L. F.; Wang, W. I.; Mendez, E. E. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1555 

    Clear negative differential resistance has been observed in a GaAs/AlAs/GaAs single-barrier heterostructure due to the presence of a quasi-bound state associated with the X-point profile. This surprising result is due to the fact that although the Γ-point profile of this heterostructure is a...

  • Observation of resonant tunneling in AlGaAs/GaAs triple barrier diodes. Nakagawa, T.; Imamoto, H.; Kojima, T.; Ohta, K. // Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p73 

    Resonant tunneling and accompanying negative differential resistance are observed at 85 K in Al0.4Ga0.6As/GaAs triple barrier diodes, where two GaAs wells are separated by three AlGaAs barriers. Five resonance peaks, one small peak for one bias polarity, one medium and one large peak for each...

  • Inelastic tunneling in AlAs-GaAs-AlAs heterostructures. Mendez, E. E.; Calleja, E.; Wang, W. I. // Applied Physics Letters;9/12/1988, Vol. 53 Issue 11, p977 

    Current-voltage measurements in AlAs-GaAs-AlAs heterostructures under hydrostatic pressure show that inelastic tunneling through the X[sub AlAs]-Γ[sub GaAs] discontinuity is reduced as the thickness of the AlAs layers is decreased. This reduction makes possible large peak-to-valley current...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics