TITLE

Epitaxial GexSi1-x/Si (100) structures produced by pulsed laser mixing of evaporated Ge on Si (100) substrates

AUTHOR(S)
Abelson, John R.; Sigmon, Thomas W.; Kim, Ki Bum; Weiner, Kurt H.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/18/1988, Vol. 52 Issue 3, p230
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Heteroepitaxial GexSi1-x alloy layers have been formed by pulsed laser induced mixing of pure germanium films and Si (100) substrates. Ge films 50–200 Å thick are electron beam evaporated onto Si (100) under ≤1×10-7 Torr vacuum. The near surface of the sample then undergoes a rapid melt and regrowth process using 2–10 pulses from a XeCl excimer laser. The laser has a 37-ns pulse width at 308 nm and its energy density of 0.5–1.5 J/cm2 is precisely homogenized into a 4×4 mm square area. The alloy layers are 250–1600 Å thick, have a Ge fraction x=2.5–19%, and exhibit excellent crystallinity as evaluated by MeV ion channeling and lattice resolution cross-sectional transmission electron microscopy. Unlike layer growth by molecular beam epitaxy, this approach is insensitive to minor levels of contamination because the original Ge/Si interface is melted through during the laser processing.
ACCESSION #
9825640

 

Related Articles

  • Structure of epitaxial PbSe grown on Si(111) and Si(100) without a fluoride buffer layer. Müller, P.; Fach, A.; John, J.; Tiwari, A. N.; Zogg, H.; Kostorz, G. // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p1911 

    Presents a study which examined epitaxial growth of lead selenide (PbSe) on (111)- and (100)-oriented silicon substrates without an intermediate buffer layer. Experimental procedures; Direct growth on silicon (111) and silicon (100); Conclusions.

  • Ge epilayer of high quality on a Si substrate by solid-phase epitaxy. Liu, W.S.; Chen, J.S. // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1405 

    Examines germanium epilayer on a silicon substrate by solid-phase epitaxy. Oxidation of the silicon substrate in a wet ambient; Observation of the crystalline quality of germanium epilayer; Analysis of oxidized samples using backscattering spectrometry, transmission electron microscopy, and...

  • High-quality Ge epilayers on Si with low threading-dislocation densities. Hsin-Chiao Luan; Lim, Desmond R.; Lee, Kevin K.; Chen, Kevin M.; Sandland, Jessica G.; Wada, Kazumi; Kimerling, Lionel C. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2909 

    Demonstrates the formation of high-quality germanium epilayers on silicon with low-threading-dislocation densities achieved through a two-step ultrahigh vacuum/chemical vapor deposition process followed by cyclic thermal annealing. Average threading-dislocation density produced by combining...

  • Precursors for group IV epitaxy for micro/opto-electronic applications. Thomas, Shawn G.; Bauer, Matthias; Stephens, Matthew; Kouvetakis, John // Solid State Technology;Apr2009, Vol. 52 Issue 4, p12 

    The article discusses the non-traditional chemical precursors for silicon (Si), carbon-doped Si (Si:C) and germanium deposition. According to the article, these precursors allow improved manufacturability through higher growth rates, novel approaches to interface or band-gap engineering, and new...

  • Liquid-metal-mediated homoepitaxial film growth of Ge at low temperature. Fulin Xiong; Ganz, Eric; Loeser, A.G.; Golovchenko, J.A.; Spaepen, Frans // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3586 

    Examines the liquid-metal-mediated homoepitaxial film growth of germanium (Ge) at low temperature. Impact of the vapor-liquid-solid (VLS) mechanism in silicon crystal growth; Importance of selective chemical etching in removing the surface gold after VLS growth; Use of a cross sectional...

  • Growth and characterization of Si1-xGex and Ge epilayers on (100) Si. Baribeau, J. M.; Jackman, T. E.; Houghton, D. C.; Maigné, P.; Denhoff, M. W. // Journal of Applied Physics;6/15/1988, Vol. 63 Issue 12, p5738 

    Focuses on a study which investigated two approaches to the growth of high-quality expitaxial germanium (Ge) epilayers on (100) silicon (Si). Results from the compositional-grading Si[sub1-x]Ge[subx] layers and the use of strained-layer superlattices as dislocation filters; Findings from the...

  • Atomic layer epitaxy of Si on Ge(100): Direct recoiling studies of film morphology. Koleske, D. D.; Gates, S. M. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1615 

    Deals with a study which compared two silicon atomic layer epitaxy schemes, based on chlorine/hydrogen exchange chemistry, by deposition of silicon on germanium. Information on the atomic layer epitaxy method; Methodology of the study; Results and discussion.

  • Kinetics of epitaxial Si1-xGex growth using SiH2Cl2–GeH4–H2 mixture in reduced-pressure chemical vapor deposition. Ito, S.; Nakamura, T.; Nishikawa, S. // Applied Physics Letters;8/19/1996, Vol. 69 Issue 8, p1098 

    The dependences of the Ge/Si ratio in epitaxial Si1-xGex layers grown using a SiH2Cl2–GeH4–H2 mixture by reduced-pressure chemical vapor deposition on the flow rate ratio of GeH4/SiH2Cl2 and on the total flow rate have been examined in the temperature range from 480 to 600 °C....

  • Asymmetric strain distributions resulting from deliberately induced misfit dislocations. Tuppen, C. G.; Gibbings, C. J.; Hockly, M.; Halliwell, M. A. G. // Applied Physics Letters;1/8/1990, Vol. 56 Issue 2, p140 

    Misfit dislocations oriented in a specific <110> direction have been produced in strained Si1-xGex epitaxial layers deposited on Si(001), using sites of localized crystallographic damage as dislocation sources. During a high-temperature anneal, misfit dislocation propagation from a series of...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics