Time-of-flight study on the thermal etching of Al with Cl2

Janssen, R. J. A. A.; Kolfschoten, A. W.; van Veen, G. N. A.
January 1988
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p98
Academic Journal
A pseudorandom cross-correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time-of-flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating chopping disk with slots in a pseudorandom sequence on its periphery. TOF distributions and temperature-dependent reaction product yields are measured for the products desorbing from the chlorinated aluminum substrate in the temperature range from 300 to 900 K. A reaction mechanism will be discussed in some detail.


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