TITLE

Picosecond reflection high-energy electron diffraction

AUTHOR(S)
Elsayed-Ali, H. E.; Mourou, G. A.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reflection high-energy electron diffraction with picosecond time resolution is demonstrated. The surface diffraction patterns are obtained using a laser driven picosecond electron gun. Due to the synchronization of the photogenerated electron pulses with the laser source, such a technique provides a picosecond time-resolved surface structural probe sensitive to the first few monolayers.
ACCESSION #
9825628

 

Related Articles

  • Observations on intensity oscillations in reflection high-energy electron diffraction during epitaxial growth of Si(001) and Ge(001). Aarts, J.; Gerits, W. M.; Larsen, P. K. // Applied Physics Letters;4/7/1986, Vol. 48 Issue 14, p931 

    Intensity oscillations have been found in the specular beam of reflection high-energy electron diffraction patterns during growth of Si(001) and Ge(001) by molecular beam epitaxy. The reported results demonstrate the dependence of the amplitude and damping of the oscillations on different...

  • A differential reflection high energy electron diffraction measurement system. Chang, C. E.; Chin, T. P.; Tu, C. W. // Review of Scientific Instruments;Mar91, Vol. 62 Issue 3, p655 

    An economical, real-time differential reflection high energy electron diffraction (RHEED) measurement system which is effective in a high-noise environment is described. Two fiber optic cables sample the RHEED intensities from the phosphorescent screen in a molecular beam epitaxy (MBE) growth...

  • Precise determination of aluminum content in AlGaAs. Chang, K. H.; Lee, C. P.; Wu, J. S.; Liu, D. G.; Liou, D. C.; Wang, M. H.; Chen, L. J.; Marais, Mario A. // Journal of Applied Physics;11/1/1991, Vol. 70 Issue 9, p4877 

    Determines the aluminum (Al) composition of AlGaAs by various methods. Preparation of the AlGaAs layers; Way to obtain the Al mole fraction; Purpose of the reflection high-energy electron diffraction intensity oscillation; Formula for the Al mole fraction of the AlGaAs from the...

  • Study of the first-stage relaxation in ZnTe/(001)CdTe strained layers. Eymery, J.; Tatarenko, S. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3631 

    Analyzes the growth of highly strained zinc tantalum on (001) cadmium tellurium by reflection high-energy electron diffraction analysis. Effect of Zn excess pressure on the critical thickness; Evolution of the lattice mismatch with ZnTe thickness; Mechanism of layer growth.

  • Zn and Te desorption from the (100) ZnTe surface. Tatarenko, S.; Daudin, B. // Applied Physics Letters;4/3/1995, Vol. 66 Issue 14, p1773 

    Examines the desorption rate of zinc and tellurium from zinc-tellurium surface. Determination of activation energy for the desorption of zinc and tellurium; Contention on desorption time as a function of temperature using reflection high energy electron diffraction (RHEED); Details on the...

  • In situ monitoring during pulsed laser deposition of complex oxides using reflection high energy.... Rijnders, Guus J.H.M.; Koster, Gertjan // Applied Physics Letters;4/7/1997, Vol. 70 Issue 14, p1888 

    Demonstrates the use of reflection high energy electron diffraction for in situ monitoring technique for growth of thin films. Increase in deposition pressure using a two-stage differential pumping system; Observability of clear RHEED patterns at high pressures; Measurement of the intensity...

  • Surface reconstructions of GaAs(111)A and (111)B: A static surface phase study by reflection.... Woolf, D.A.; Westwood, D.I.; Williams, R.H. // Applied Physics Letters;3/22/1993, Vol. 62 Issue 12, p1370 

    Investigates surface reconstructions of gallium arsenide(111)A and (111)B by reflection high-energy electron diffraction. Variation of dimensional surface phase maps; Application of x-ray photoelectron spectroscopy; Distinction between arsenic fluxes and substrate temperature.

  • Reflection high-energy electron diffraction intensity oscillations and anisotropy on vicinal.... Shitara, T.; Neave, J.H.; Joyce, B.A. // Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1658 

    Examines the reflection high-energy electron diffraction (RHEED) specular beam intensity oscillations on vicinal AlAs(001). Growth of AlAs on misoriented substrate; Temperature dependence of the RHEED oscillation behavior; Estimation of the effective surface migration barrier for aluminum adatoms.

  • Model for reflection high-energy electron diffraction intensity recovery during GaP growth in.... Vaccaro, Pablo; Hashimoto, Tadao // Applied Physics Letters;12/27/1993, Vol. 63 Issue 26, p3601 

    Observes reflection high-energy electron diffraction intensity while growing GaP by laser-triggered chemical beam epitaxy. Decrease of the intensity after each laser pulse; Saturation of the GaP surface with chemisorbed diethylgallium (DEGa) and physisorbed triethylgallium; Decomposition of a...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics