Low-frequency noise measurements on n-InGaAs/p-InP junction field-effect transistor structures

Kugler, S.; Steiner, K.; Seiler, U.; Heime, K.; Kuphal, E.
January 1988
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p111
Academic Journal
Deep level analysis in the ohmic regime of ungated n-InGaAs/p-InP junction field-effect transistor structures was made by low-frequency noise measurements. The noise spectra exhibit two deep trap levels in the n-InGaAs channel with activation energies of 0.49 and 0.37 eV. The related capture cross sections are 7×10-15 and 4×10-16 cm2, respectively.


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