TITLE

Very high purity InP epilayer grown by metalorganic chemical vapor deposition

AUTHOR(S)
Razeghi, M.; Maurel, Ph.; Defour, M.; Omnes, F.; Neu, G.; Kozacki, A.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Very high purity InP epilayers have been grown by low-pressure metalorganic chemical vapor deposition growth technique using trimethylindium as In source. Residual doping levels as low as 3×1013 cm-3 , with Hall mobility as high as 6000 cm2 V-1 s-1 at 300 K and 200 000 cm2 V-1 s-1 at 50 K have been measured. These results and photoluminescence at 2 K showed that it is the purest InP epilayer ever reported in the literature, with zero compensation ratio.
ACCESSION #
9825618

 

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