TITLE

High-temperature stability of Nb/GaAs and NbN/GaAs interfaces

AUTHOR(S)
Ding, J.; Lee, B.; Gronsky, R.; Washburn, J.; Chin, D.; Van Duzer, T.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p135
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The interface stabilities of Nb/GaAs and NbN/GaAs contacts at temperatures up to 700 °C for Nb/GaAs and 850 °C for NbN/GaAs have been investigated by transmission electron microscopy and x-ray diffractometry techniques. Results reveal that a Nb/GaAs reaction takes place at temperatures above 600 °C, and interdiffusion at the NbN/GaAs interface occurs at temperatures above 800 °C. The correlation between the observed interface morphologies before and after annealing and previously reported electrical properties of these contacts is also discussed.
ACCESSION #
9825604

 

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