Initial stages of epitaxial growth: Gallium arsenide on silicon

Zinke-Allmang, M.; Feldman, L. C.; Nakahara, S.
January 1988
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p144
Academic Journal
A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.


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