TITLE

Initial stages of epitaxial growth: Gallium arsenide on silicon

AUTHOR(S)
Zinke-Allmang, M.; Feldman, L. C.; Nakahara, S.
PUB. DATE
January 1988
SOURCE
Applied Physics Letters;1/11/1988, Vol. 52 Issue 2, p144
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A model for the morphology of the first layers of GaAs on Si(111) is proposed based on observations of gallium cluster formation on As-terminated Si(111). In this model Ga is mobile and tends to form clusters, but is immobilized by arriving As atoms. Substrate-temperature-dependent ion scattering and transmission electron microscopy investigations are in agreement with this model and allow the extraction of a clustering related activation energy. These results establish conditions necessary for uniform film growth of GaAs/Si at the important film/substrate interface.
ACCESSION #
9825601

 

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